Method for manufacturing light-emitting device

ABSTRACT

The deposition substrate of the present invention includes a light-transmitting substrate having a first region and a second region. In the first region, a first heat-insulating layer transmitting light is provided over the light-transmitting substrate, a light absorption layer is provided over the first heat-insulating layer, and a first organic compound-containing layer is provided over the light absorption layer. In the second region, a reflective layer is provided over the light-transmitting substrate, a second heat-insulating layer is provided over the reflective layer, and a second organic compound-containing layer is provided over the second heat-insulating layer. The edge of the second heat-insulating layer is placed inside the edge of the reflective layer, and there is a space between the first heat-insulating layer and the second heat-insulating layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a deposition substrate and a method formanufacturing a light-emitting device.

2. Description of the Related Art

In a light-emitting device provided with an electroluminescent(hereinafter also referred to as EL) element, a color light-emittingelement that emits color light is used to perform full-color display. Inorder to form the color light-emitting element, a light-emittingmaterial of each color needs to be formed in a fine pattern on anelectrode.

In general, light-emitting materials are deposited by an evaporationmethod, which has a problem in that a material-use efficiency is low,the size of a substrate is limited, and so on, and thus is not suitablefor industrialization that requires high productivity and low cost.

As a technique for solving the aforementioned problem, a method has beenproposed in which a light-emitting layer is formed by transferring alight-emitting material to an element-formation substrate by laserthermal transfer (for example, see Reference 1: Japanese PublishedPatent Application No. 2006-309995). In Reference 1, laser light isemitted using a transferring substrate that has a transfer layerincluding a light-emitting layer, and a photothermal conversion layerincluding a low-absorption region and a high-absorption region that havedifferent absorption rates for the laser light, whereby heat necessaryfor sublimation of the transfer layer is selectively supplied to thehigh-absorption region.

SUMMARY OF THE INVENTION

However, in the aforementioned transferring substrate disclosed inReference 1, the low-absorption region touches the high-absorptionregion in the photothermal conversion layer. Accordingly, heat generatedin the high-absorption region is conducted to the low-absorption regionto sublime the transfer layer on the low-absorption region, which causesa problem in that the transferred light-emitting layer has a misalignedor deformed pattern.

It is an object of one aspect of the present invention to provide adeposition substrate and a deposition method for forming a thin film ina fine pattern on a deposition-target substrate without providing a maskbetween an evaporation material and the deposition-target substrate. Itis another object of one aspect of the present invention to manufacturea high-definition light-emitting device with high productivity byforming a light-emitting element with the use of such a depositionmethod.

In the present invention, a deposition substrate in which a first regionand a second region that reflect a deposition pattern are formed over alight-transmitting substrate is used. An organic compound-containinglayer formed over the first region that is a deposition region on adeposition-target substrate placed facing the deposition substrate isselectively heated so that a material contained in the organiccompound-containing layer is deposited from the deposition substrate onthe deposited-target substrate. In the first region, a light absorptionlayer is formed to absorb emitted light so that heat is supplied to theorganic compound-containing layer. In the second region, a reflectivelayer is formed to reflect emitted light so that heat is not supplied tothe organic compound-containing layer.

The first region and the second region each include a heat-insulatinglayer to prevent the light absorption layer in the first region fromtouching the reflective layer in the second region. An opening is formedin the heat-insulating layer in the second region to surround the firstregion so that the heat-insulating layers are not continuously depositedin the first region and the second region. Accordingly, theheat-insulating layer in the first region is spatially separated fromthat in the second region: a first heat-insulating layer is provided inthe first region and a second heat-insulating layer is provided in thesecond region so as to have a distance (a space) from the firstheat-insulating layer.

When there is a space (a distance) between the first heat-insulatinglayer in the first region and the second heat-insulating layer in thesecond region, it is possible to increase the heat conduction path fromthe light absorption layer in the first region to a second organiccompound-containing layer in the second region. Therefore, the time forthe heat generated in the light absorption layer in the first region toreach the second region increases. Furthermore, the heat is absorbed ordiffused to be dissipated while passing through the conduction path,namely, the first heat-insulating layer, the light-transmittingsubstrate, and the second heat-insulating layer. It is preferable thatthe heat conduction path include elements made of different materials,such as the first heat-insulating layer, the light-transmittingsubstrate, and the second heat-insulating layer, because more heat canbe absorbed or diffused to be dissipated when passing therethrough.Thus, a large part of the second organic compound-containing layer canbe left in the deposition substrate; therefore, a film reflecting thepattern of the first region can be selectively deposited in a finepattern on a deposition-target substrate. In addition, even when lamplight, which requires a longer irradiation time than laser light, isused, the second organic compound-containing layer in the second regioncan be prevented from being heated and the temperature differencebetween the first region and the second region can be kept; thus, a lampcan be used as a light source. A larger area can be treated at a timewith lamp light as compared with laser light, resulting in reduction inmanufacturing time and improvement in throughput.

Note that in this specification, a substrate on which a thin film isformed in a fine pattern is referred to as a deposition-targetsubstrate, and a substrate for supplying a material to be formed on thedeposition-target substrate is referred to as a deposition substrate. Inaddition, a heat conduction path means an element such as aheat-insulating layer included in a deposition substrate, and does notinclude space such as air.

According to an aspect of the present invention, a deposition substrateincludes a light-transmitting substrate having a first region and asecond region. In the first region, a first heat-insulating layertransmitting light is provided over the light-transmitting substrate, alight absorption layer is provided over the first heat-insulating layer,and a first organic compound-containing layer is provided over the lightabsorption layer. In the second region, a reflective layer is providedover the light-transmitting substrate, a second heat-insulating layer isprovided over the reflective layer, and a second organiccompound-containing layer is provided over the second heat-insulatinglayer. The edge of the second heat-insulating layer is placed inside theedge of the reflective layer, and there is a space between the firstheat-insulating layer and the second heat-insulating layer.

According to another aspect of the present invention, a depositionsubstrate includes a light-transmitting substrate having a first regionand a second region. In the first region, a first heat-insulating layertransmitting light is provided over the light-transmitting substrate, afirst light absorption layer is provided over the first heat-insulatinglayer, and a first organic compound-containing layer is provided overthe first light absorption layer. In the second region, a reflectivelayer is provided over the light-transmitting substrate, a secondheat-insulating layer is provided over the reflective layer, a secondlight absorption layer is provided over the second heat-insulatinglayer, and a second organic compound-containing layer is provided overthe second light absorption layer. The edge of the secondheat-insulating layer is placed inside the edge of the reflective layer,and there is a space between the first heat-insulating layer and thesecond heat-insulating layer.

According to another aspect of the present invention, a depositionsubstrate includes a light-transmitting substrate having a first regionand a second region. In the first region, a first heat-insulating layertransmitting light is provided over the light-transmitting substrate, alight absorption layer is provided over the first heat-insulating layer,a first reflective layer is provided over the light absorption layer,and a first organic compound-containing layer is provided over the firstreflective layer. In the second region, a second reflective layer isprovided over the light-transmitting substrate, a second heat-insulatinglayer is provided over the second reflective layer, and a second organiccompound-containing layer is provided over the second heat-insulatinglayer. The edge of the second heat-insulating layer is placed inside theedge of the second reflective layer, and there is a space between thefirst heat-insulating layer and the second heat-insulating layer.

The second heat-insulating layer in the second region may be providedunder the reflective layer, and the light-transmitting substrate, thesecond heat-insulating layer, and the reflective layer may be stacked inthis order. For example, according to another aspect of the presentinvention, a deposition substrate includes a light-transmittingsubstrate having a first region and a second region. In the firstregion, a first heat-insulating layer transmitting light is providedover the light-transmitting substrate, a light absorption layer isprovided over the first heat-insulating layer, and a first organiccompound-containing layer is provided over the light absorption layer.In the second region, a second heat-insulating layer is provided overthe light-transmitting substrate, a reflective layer is provided overthe second heat-insulating layer, and a second organiccompound-containing layer is provided over the reflective layer. Theedge of the second heat-insulating layer is placed inside the edge ofthe reflective layer, and there is a space between the firstheat-insulating layer and the second heat-insulating layer.

In the aforementioned structures, a third heat-insulating layer may beprovided between the second heat-insulating layer and the second organiccompound-containing layer. By providing the third heat-insulating layer,it is possible to increase the heat conduction path from the lightabsorption layer (or the first light absorption layer) formed in thefirst region to the second organic compound-containing layer formed inthe second region, which makes it more difficult to conduct heatgenerated in the light absorption layer (or the first light absorptionlayer) to the second organic compound-containing layer.

In the case where the first heat-insulating layer and the secondheat-insulating layer are provided under the reflective layer, the firstheat-insulating layer and the second heat-insulating layer may be formedby processing the light-transmitting substrate. In that case, the firstheat-insulating layer and the second heat-insulating layer areprojections on the surface of the light-transmitting substrate, whichare parts of the light-transmitting substrate.

By using any of the aforementioned deposition substrates of the presentinvention, a thin film can be deposited on a deposition-target substrateand a light-emitting device can be manufactured. According to one aspectof the present invention, a method for manufacturing a light-emittingdevice uses a deposition substrate including a light-transmittingsubstrate having a first region and a second region. In the firstregion, a first heat-insulating layer transmitting light is providedover the light-transmitting substrate, a light absorption layer isprovided over the first heat-insulating layer, and a first organiccompound-containing layer is provided over the light absorption layer.In the second region, a reflective layer is provided over thelight-transmitting substrate, a second heat-insulating layer is providedover the reflective layer, and a second organic compound-containinglayer is provided over the second heat-insulating layer. The edge of thesecond heat-insulating layer is placed inside the edge of the reflectivelayer, and there is a space between the first heat-insulating layer andthe second heat-insulating layer. The method for manufacturing alight-emitting device of the present invention includes the steps of:placing the deposition substrate and a deposition-target substrate sothat surfaces of the first organic compound-containing layer and thesecond organic compound-containing layer on the deposition substrateface a surface of the deposition-target substrate, on which a firstelectrode layer is formed; irradiating the light absorption layer withlight through the light-transmitting substrate and the firstheat-insulating layer; forming a light-emitting layer by depositing amaterial contained in the first organic compound-containing layer overthe light absorption layer irradiated with light on the first electrodelayer on the deposition-target substrate; and forming a second electrodelayer on the light-emitting layer.

According to another aspect of the present invention, a method formanufacturing a light-emitting device uses a deposition substrateincluding a light-transmitting substrate having a first region and asecond region. In the first region, a first heat-insulating layertransmitting light is provided over the light-transmitting substrate, alight absorption layer is provided over the first heat-insulating layer,and a first organic compound-containing layer is provided over the lightabsorption layer. In the second region, a second heat-insulating layeris provided over the light-transmitting substrate, a reflective layer isprovided over the second heat-insulating layer, and a second organiccompound-containing layer is provided over the reflective layer. Theedge of the second heat-insulating layer is placed inside the edge ofthe reflective layer, and there is a space between the firstheat-insulating layer and the second heat-insulating layer. The methodfor manufacturing a light-emitting device of the present inventionincludes the steps of: placing the deposition substrate and adeposition-target substrate so that surfaces of the first organiccompound-containing layer and the second organic compound-containinglayer on the deposition substrate face a surface of thedeposition-target substrate, on which a first electrode layer is formed;irradiating the light absorption layer with light through thelight-transmitting substrate and the first heat-insulating layer;forming a light-emitting layer by depositing a material contained in thefirst organic compound-containing layer over the light absorption layerirradiated with light on the first electrode layer on thedeposition-target substrate; and forming a second electrode layer on thelight-emitting layer.

In the case where a light-emitting layer is formed by using the presentinvention, the first region may correspond to one pixel, or the firstregion may correspond to a plurality of pixels to manufacturelight-emitting layers of the plurality of pixels at a time.

According to the present invention, a thin film can be formed in a finepattern on a deposition-target substrate without providing a maskbetween an evaporation material and the deposition-target substrate.

The step of irradiating the light absorption layer with light ispreferably performed in a reduced pressure. When light is emitted in areduced pressure so that a material is deposited on a deposition-targetsubstrate, the effect of contaminants such as dust on a deposited filmcan be reduced.

Light irradiation may be performed using light that can be absorbed bythe light absorption layer, and lamp light using a lamp as a lightsource or laser light using a laser as a light source may be used.

In addition, laser light having a repetition rate of 10 MHz or more anda pulse width of 100 fs to 10 ns may be used for light irradiation. Byusing such laser light having a very short pulse width, thermalconversion is efficiently performed in a light absorption layer so thata material can be heated efficiently. Furthermore, since the laser lighthaving a repetition rate of 10 MHz or more and a pulse width of 100 fsto 10 ns can be emitted in a short time, thermal diffusion can besuppressed and a fine pattern can be deposited. Still furthermore, thelaser light having a repetition rate of 10 MHz or more and a pulse widthof 100 fs to 10 ns can emit high output power; thus, a large area can betreated at a time. In addition, by shaping the laser light into a linearor rectangular beam on an irradiated surface, a processed substrate canbe efficiently scanned with the laser light. Accordingly, time necessaryfor deposition (takt time) is reduced, resulting in improvement ofproductivity.

It is preferable that the heat-insulating layer have a lighttransmittance of 60% or more and be formed of a material having a lowerthermal conductivity than a material used for the reflective layer andthe light absorption layer. With a low thermal conductivity, heatgenerated from emitted light can be efficiently used for deposition.

The organic compound-containing layer is formed of a liquid compositioncontaining an organic compound and deposited on the first electrodeformed on the deposition-target surface of the deposition-targetsubstrate, whereby a light-emitting element can be formed. An EL layercan be formed in a fine pattern on the deposition-target substrate sothat each light-emitting color can be individually deposited. Ahigh-definition light-emitting device having such a light-emittingelement can be manufactured.

Since a large area can be treated by the invention, a thin film can beformed with high productivity even on a deposition-target substratehaving a large area. Thus, high-definition light-emitting device andelectronic device can be manufactured at low cost.

According to one aspect of the present invention, a thin film can beformed in a fine pattern on a deposition-target substrate withoutproviding a mask between an evaporation material and thedeposition-target substrate. According to another aspect of the presentinvention, a light-emitting element can be formed by such a depositionmethod and a high-definition light-emitting device can be manufactured.Furthermore, a thin film can be formed on a deposition-target substratehaving a large area by one aspect of the present invention; therefore,large-sized light-emitting device and electronic device can bemanufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1D are cross-sectional views illustrating a depositionsubstrate and a deposition method of the present invention;

FIGS. 2A to 2F are cross-sectional views illustrating a method formanufacturing a deposition substrate of the present invention;

FIGS. 3A to 3D are cross-sectional views illustrating an example of adeposition substrate of the present invention;

FIGS. 4A to 4E are cross-sectional views illustrating an example of adeposition substrate of the present invention;

FIGS. 5A and 5B are respectively a plan view and a cross-sectional viewillustrating a light-emitting device of the present invention;

FIGS. 6A and 6B are respectively a plan view and a cross-sectional viewillustrating a light-emitting device of the present invention;

FIGS. 7A to 7D are cross-sectional views illustrating manufacturingsteps of a light-emitting device of the present invention;

FIG. 8A is a plan view illustrating a light-emitting device of thepresent invention, and FIGS. 8B and 8C are cross-sectional viewsthereof;

FIGS. 9A to 9D are cross-sectional views illustrating manufacturingsteps of a light-emitting device of the present invention;

FIGS. 10A and 10B are views illustrating a deposition substrate of thepresent invention;

FIGS. 11A and 11B are views illustrating a deposition substrate of thepresent invention;

FIGS. 12A and 12B are cross-sectional views each illustrating astructure of a light-emitting element that can be applied to the presentinvention;

FIG. 13 is a top view illustrating a light-emitting display module ofthe present invention;

FIGS. 14A and 14B are respectively a top view and a cross-sectional viewillustrating a light-emitting display module of the present invention;

FIGS. 15A to 15F are diagrams each illustrating an electronic device ofthe present invention;

FIGS. 16A and 16B are diagrams each illustrating an electronic device ofthe present invention;

FIGS. 17A to 17C are diagrams illustrating an electronic device of thepresent invention;

FIGS. 18A to 18C are cross-sectional views each illustrating an exampleof a deposition substrate of the present invention;

FIGS. 19A to 19D are cross-sectional views each illustrating an exampleof a deposition substrate of the present invention;

FIGS. 20A to 20C are cross-sectional views each illustrating an exampleof a deposition substrate of the present invention;

FIG. 21 is a cross-sectional view illustrating a deposition substrate ofEmbodiment 1;

FIGS. 22A and 22B are cross-sectional views of a deposition substrate ofcomparative example 1 and comparative example 2, respectively;

FIG. 23 is a graph showing the maximum temperature of the depositionsubstrate of Embodiment 1 at the time of light irradiation;

FIG. 24 is a graph showing the maximum temperature of the depositionsubstrate of the comparative example 1 at the time of light irradiation;

FIG. 25 is a graph showing the maximum temperature of the depositionsubstrate of the comparative example 2 at the time of light irradiation;

FIGS. 26A and 26B are respectively a cross-sectional view and a top viewillustrating an example of a deposition substrate of the presentinvention; and

FIGS. 27A and 27B are top views illustrating manufacturing steps of alight-emitting device of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Embodiment modes of the present invention will be described below withreference to the drawings. Note that the present invention is notlimited to the description given below, and it is to be understood thatvarious changes and modifications will be apparent to those skilled inthe art unless such changes and modifications depart from the spirit andscope of the present invention. Accordingly, the present inventionshould not be construed as being limited to the description of theembodiment modes given below. Note that in all the drawings forexplaining the embodiment modes, the identical portions or portionshaving a similar function are denoted by the identical referencenumerals, and description thereof is omitted.

Embodiment Mode 1

In this embodiment mode, examples of a deposition substrate and adeposition method will be described with reference to FIGS. 1A to 1D,FIGS. 2A to 2F, FIGS. 3A to 3D, and FIGS. 4A to 4E, which are intendedto form a thin film in a fine pattern on a deposition-target substrateby the present invention.

FIG. 1A illustrates an example of a deposition substrate. The depositionsubstrate includes a first region (reference numeral 1 in the drawing)and a second region (reference numeral 2 in the drawing) as illustratedin FIG. 1A.

In the first region, an organic compound-containing layer is heated bylight irradiation so that the material in the layer is deposited on adeposition-target substrate that is placed facing the depositionsubstrate. In the second region, emitted light is reflected so that anorganic compound-containing layer is not heated to remain in thedeposition substrate.

Accordingly, in the first region, a light absorption layer is formed toabsorb emitted light so that heat is supplied to the organiccompound-containing layer, and in the second region, a reflective layeris formed to reflect light so that heat is not supplied to the organiccompound-containing layer.

In the first region, a first heat-insulating layer 103 a is formed overa first substrate 101, and a light absorption layer 104 is formed overthe first heat-insulating layer 103 a. In the second region, areflective layer 102 is formed over the first substrate 101, and asecond heat-insulating layer 103 b is formed over the reflective layer102. Thus, an organic compound-containing layer 105 is formed as theuppermost layer of the first region and the second region. The lightabsorption layer 104 in the first region and the reflective layer 102 inthe second region are separated by the first heat-insulating layer 103 anot to be in contact with each other.

The heat-insulating layer in the first region is spatially separatedfrom that in the second region. The first heat-insulating layer 103 a isprovided in the first region, and the second heat-insulating layer 103 bis provided in the second region so as to have a distance (a space) fromthe first insulating layer 103 a. Therefore, the edge of the secondheat-insulating layer 103 b is placed inside the edge of the reflectivelayer 102.

In the present invention, a region corresponding to part of thedeposition-target substrate where a thin film is to be formed isreferred to as the first region, and there is a distance between thefirst heat-insulating layer formed in the first region and the secondheat-insulating layer formed in the second region. Thus, a space isformed in the second region to surround the first heat-insulating layerformed in the first region. FIG. 26B is a top view of the depositionsubstrate illustrated in FIG. 1A. Note that FIG. 26A is across-sectional view of the deposition substrate as illustrated in FIG.1A, which is taken along line W-X of FIG. 26B. As illustrated in FIGS.26A and 26B, between the first heat-insulating layer 103 a formed in thefirst region and the second heat-insulating layer 103 b formed in thesecond region, there is a space surrounding the first heat-insulatinglayer 103 a, and the reflective layer 102 is exposed. Note that in FIG.26A, the organic compound-containing layer 105 is omitted in order toclearly show the positional relationship between the firstheat-insulating layer 103 a and the second heat-insulating layer 103 b.

In some cases, the side surface of the heat-insulating layer (the firstheat-insulating layer and the second heat-insulating layer) has an angleless than 90° with respect to the surface of the substrate and istapered depending on the etching method or etching conditions.

In the present invention, deposition is performed by irradiating thelight absorption layer 104 formed over the first substrate 101 withlight from the first substrate 101 side. Therefore, the first substrate101 needs to have a light-transmitting property; the reflective layer102, reflectivity; the first heat-insulating layer 103 a, alight-transmitting property; and the light absorption layer 104, anabsorption property, with respect to the light. Accordingly, the kind ofmaterials suitable for the first substrate 101, the reflective layer102, the first heat-insulating layer 103 a, and the light absorptionlayer 104 varies depending on the wavelength of emitted light, and thusneeds to be selected as appropriate.

In addition, the first substrate 101 is preferably made of a materialhaving a low thermal conductivity. With a low thermal conductivity, heatgenerated from emitted light can be efficiently used for deposition. Asthe first substrate 101, for example, a glass substrate, a quartzsubstrate, or a plastic substrate containing an inorganic material canbe used. As the glass substrate, is it possible to use a variety ofso-called non-alkali glass substrates used in the electronics industry,such as an aluminosilicate glass substrate, an aluminoborosilicate glasssubstrate, or a barium borosilicate glass substrate.

The reflective layer 102 is a layer for reflecting light so that thelight absorption layer 104 is selectively irradiated with the lightduring deposition. Therefore, the reflective layer 102 is preferablymade of a material having a high reflectance with respect to the emittedlight. Specifically, the reflective layer 102 preferably has areflectance of 85% or more, and more preferably, a reflectance of 90% ormore with respect to the emitted light.

As a material for the reflective layer 102, for example, silver, gold,platinum, copper, an alloy containing aluminum, or an alloy containingsilver can be used.

The thickness of the reflective layer 102, which depends on a material,is preferably 100 nm or more. If the reflective layer 102 has athickness of 100 nm or more, the emitted light can be prevented frompassing therethrough.

Furthermore, the reflective layer 102 can be processed into a desiredshape by a variety of methods, but is preferably processed by dryetching. By use of dry etching, a sharp sidewall can be formed and thusa fine pattern can be obtained.

The function of the first heat-insulating layer 103 a is to prevent heatgenerated from light absorbed by the light absorption layer 104 frombeing conducted to the second region and to supply enough heat to theorganic compound-containing layer 105 formed over the light absorptionlayer 104. In addition, the first heat-insulating layer 103 a and thesecond heat-insulating layer 103 b prevent the heat remaining in thereflective layer 102, which is generated from part of the lightreflected by the reflective layer 102, or the heat generated in thelight absorption layer 104 in the first region from being conducted tothe organic compound-containing layer 105 formed in the second region.In the present invention, it is preferable that a heat-insulating layercompletely block heat conduction; however, in this specification, alayer that blocks heat conduction more than at least a light absorptionlayer is also referred to as a heat-insulating layer.

Thus, the first heat-insulating layer 103 a and the secondheat-insulating layer 103 b need to be made of a material having a lowerthermal conductivity than materials used for the reflective layer 102and the light absorption layer 104. In the case of the structureillustrated in FIGS. 1A to 1D, the light absorption layer 104 isirradiated with light through the first heat-insulating layer 103 a;therefore, the first heat-insulating layer 103 a needs to have alight-transmitting property. In that case, the first heat-insulatinglayer 103 a in the present invention needs to be made of a material thathas a high light transmittance as well as a low thermal conductivity.Specifically, the first heat-insulating layer 103 a is preferably madeof a material having a light transmittance of 60% or more.

As a material used for the first heat-insulating layer 103 a and thesecond heat-insulating layer 103 b, for example, titanium oxide, siliconoxide, silicon nitride oxide, zirconium oxide, or silicon carbide can beused.

The thickness of each of the first heat-insulating layer 103 a and thesecond heat-insulating layer 103 b, which depends on a material, ispreferably 10 nm to 2 μm, and more preferably 100 nm to 1 μm. With athickness of 10 nm to 2 μm, the first heat-insulating layer 103 a andthe second heat-insulating layer 103 b can transmit light whilepreventing heat from being conducted to the organic compound-containinglayer 105 in the second region.

The light absorption layer 104 absorbs light emitted during deposition.Therefore, the light absorption layer 104 is preferably made of amaterial that has a low reflectance and a high absorptance with respectto the emitted light. Specifically, it is preferable that the lightabsorption layer 104 have a reflectance of 70% or less with respect tothe emitted light.

Various kinds of materials can be used for the light absorption layer104. For example, a metal nitride such as titanium nitride, tantalumnitride, molybdenum nitride, or tungsten nitride, a metal such astitanium, molybdenum, or tungsten, or carbon can be used. Note that thekind of material suitable for the light absorption layer 104 variesdepending on the wavelength of emitted light, and thus needs to beselected as appropriate. In addition, the light absorption layer 104 isnot limited to a single layer and may include a plurality of layers. Forexample, the light absorption layer 104 may have a stacked structure ofa metal layer and a metal nitride layer.

The reflective layer 102, the first heat-insulating layer 103 a, thesecond heat-insulating layer 103 b, and the light absorption layer 104can be formed by a variety of methods. For example, these layers can beformed by sputtering, electron beam evaporation, vacuum evaporation,chemical vapor deposition (CVD), or the like.

The thickness of the light absorption layer 104, which depends on amaterial, is preferably large enough to prevent transmission of emittedlight. Specifically, the light absorption layer 104 preferably has athickness of 10 am to 2 μm. In addition, it is more preferable that thelight absorption layer 104 have a thickness of 10 nm to 300 nm becausedeposition can be performed using light with a lower energy when thelight absorption layer 104 has a smaller thickness. For example, in thecase of emitting light having a wavelength of 532 nm, the lightabsorption layer 104 with a thickness of 50 nm to 200 nm can efficientlyabsorb the emitted light to generate heat. Furthermore, the lightabsorption layer 104 with a thickness of 50 nm to 200 nm allows highlyaccurate deposition on the deposition-target substrate.

The light absorption layer 104 may partially transmit the emitted lightas long as a material contained in the organic compound-containing layer105 can be heated to the deposition temperature (the temperature atwhich at least part of the material contained in the organiccompound-containing layer 105 is deposited on the deposition-targetsubstrate). Note that when the light absorption layer 104 partiallytransmits the emitted light, the material contained in the organiccompound-containing layer 105 needs to be a material that is notdecomposed by light.

In addition, the greater the difference in reflectance between thereflective layer 102 and the light absorption layer 104 is, the morepreferable it is. Specifically, the difference in reflectance to thewavelength of the emitted light is preferably 25% or more, and morepreferably 30% or more.

The organic compound-containing layer 105 contains a material to bedeposited on the deposition-target substrate. By irradiating thedeposition substrate with light, the material contained in the organiccompound-containing layer 105 is heated to be at least partiallydeposited on the deposition-target substrate. When the organiccompound-containing layer 105 is heated, at least part of the materialcontained in the organic compound-containing layer 105 is vaporized orat least part of the organic compound-containing layer 105 is deformedby heat, whereby the film is separated due to a change in stress anddeposited on the deposition-target substrate.

The organic compound-containing layer 105 is formed by a variety ofmethods. For example, the following wet processes can be used: spincoating, roll coating, die coating, blade coating, bar coating, gravurecoating, spraying, casting, dipping, droplet discharging (ejecting) (anink-jet method), a dispenser method, and various printings (a method bywhich a film can be formed in a desired pattern, such as screen(mimeograph) printing, offset (planographic) printing, letterpressprinting, or gravure (intaglio) printing). Alternatively, a dry processsuch as vacuum evaporation, CVD, or sputtering can also be used.

The organic compound-containing layer 105 may contain a variety oforganic compound materials or a variety of inorganic compound materials.In the case where an EL layer of a light-emitting element is formed, amaterial that can be deposited to form the EL layer is used. Forexample, it is possible to use an organic compound for forming an ELlayer, such as a light-emitting material or a carrier-transportingmaterial, as well as an inorganic compound for forming an electrode orthe like of a light-emitting element, such as metal oxide, metalnitride, metal halide, or an elementary substance of metal.

The organic compound-containing layer 105 may contain a plurality ofmaterials. Furthermore, the organic compound-containing layer 105 may bea single layer or a stack of a plurality of layers.

In order to form the organic compound-containing layer 105 by a wetprocess, a desired material may be dissolved or dispersed in a solvent,and a liquid composition (a solution or a dispersion solution) may beadjusted. There is no particular limitation on the solvent as long as amaterial can be dissolved or dispersed therein and the material does notreact therewith. Examples of the solvent are as follows: halogen-basedsolvents such as chloroform, tetrachloromethane, dichloromethane,1,2-dichloroethane, and chlorobenzene; ketone-based solvents such asacetone, methyl ethyl ketone, diethyl ketone, n-propyl methyl ketone,and cyclohexanone; aromatic-based solvents such as benzene, toluene, andxylene; ester-based solvents such as ethyl acetate, n-propyl acetate,n-butyl acetate, ethyl propionate, γ-butyrolactone, and diethylcarbonate; ether-based solvents such as tetrahydrofuran and dioxane;amide-based solvents such as dimethylformamide and dimethylacetamide;dimethyl sulfoxide; hexane; water; and the like. A mixture of pluralkinds of those solvents may also be used. By using a wet process,material use efficiency can be increased, resulting in reduction inproduction cost.

In the case where the thickness and uniformity of a film formed on thedeposition-target substrate are controlled with the organiccompound-containing layer 105, the thickness and uniformity of theorganic compound-containing layer 105 need to be controlled. However,the organic compound-containing layer 105 is not necessarily a uniformlayer if it does not affect the thickness and uniformity of the filmformed on the deposition-target substrate. For example, the organiccompound-containing layer 105 may be formed in a fine island shape or asa layer having unevenness.

A method for manufacturing the deposition substrate illustrated in FIG.1A will be described with reference to FIGS. 2A to 2F.

A reflective layer 155 is formed over the first substrate 101 (see FIG.2A). Then, a mask 154 is formed over the reflective layer 155 and thereflective layer 155 is etched using the mask 154. Thus, the reflectivelayer 102 is formed over the first substrate 101 in the second region(see FIG. 2B). Next, an insulating layer is formed over the firstsubstrate 101 and the reflective layer 102 and etched using a mask 150.Thus, the first heat-insulating layer 103 a is formed over the firstsubstrate 101 in the first region, and the second heat-insulating layer103 b is formed over the reflective layer 102 in the second region (seeFIG. 2C). The edge of the second heat-insulating layer 103 b is placedinside the edge of the reflective layer 102 so that the edge of thereflective layer 102 is exposed.

The mask 150 is removed, and a light absorption layer 152 is formed overthe first heat-insulating layer 103 a, the reflective layer 102, and thesecond heat-insulating layer 103 b (see FIG. 2D). The light absorptionlayer 152 is divided by the first heat-insulating layer 103 a and thesecond heat-insulating layer 103 b.

A mask 151 is formed over the light absorption layer 152, and the lightabsorption layer 152 is etched using the mask 151 to form the lightabsorption layer 104 (see FIG. 2E). The light absorption layer 104 isformed only over the first heat-insulating layer 103 a in the firstregion.

The organic compound-containing layer 105 is formed over the firstheat-insulating layer 103 a, the light absorption layer 104, thereflective layer 102, and the second heat-insulating layer 103 b (seeFIG. 2F). Through the aforementioned steps, the deposition substrateillustrated in FIG. 1A is completed.

Next, a deposition method using the deposition substrate of the presentinvention will be described. A second substrate 107, which is adeposition-target substrate, is placed facing the surface of the firstsubstrate 101, which includes the reflective layer 102, the firstheat-insulating layer 103 a, the second heat-insulating layer 103 b, thelight absorption layer 104, and the organic compound-containing layer105 (see FIG. 1B). The first substrate 101 may partially touch thesecond substrate 107 depending on the size or layout of the substrates.

Light 110 is emitted from the back surface of the first substrate 101(the surface that does not include the reflective layer 102, the firstheat-insulating layer 103 a, the second heat-insulating layer 103 b, thelight absorption layer 104, and the organic compound-containing layer105) (see FIG. 1C). At this time, light emitted to the reflective layer102 formed over the first substrate 101 in the second region isreflected, while light emitted to the first region passes through thefirst heat-insulating layer 103 a and is absorbed by the lightabsorption layer 104. Then, the light absorption layer 104 generatesheat from the absorbed light and supplies the heat to the organiccompound-containing layer 105, whereby at least part of the materialcontained in the organic compound-containing layer 105 is deposited as afilm 111 on the second substrate 107. Accordingly, the film 111 shapedinto a desired pattern is formed on the second substrate 107 (see FIG.1D).

In the case where a light-emitting layer of a light-emitting device isformed by the present invention, the first region may be formed tocorrespond to one pixel, or may be formed to correspond to a pluralityof pixels to manufacture light-emitting layers of the plurality ofpixels at a time. For example, in the case where three color elements(e.g., RGB) are arranged in stripes to perform full-color display, thefirst region of the deposition substrate is formed to correspond to aregion including a plurality of pixels emitting the same color light,whereby light-emitting layers of the plurality of pixels can be formedon a deposition-target substrate. FIG. 27A is a top view of a depositionsubstrate including the first region provided with a plurality ofpixels. In FIG. 27A, a first heat-insulating layer 3103 a formed in thefirst region corresponds to a region including a plurality of pixels ina deposition-target substrate 3107, and a second heat-insulating layer3103 b formed in the second region has a space surrounding the firstheat-insulating layer 3103 a corresponding to the region including theplurality of pixels. Reference number 3102 indicates a reflective layerand 3104 indicates a light absorption layer. FIG. 27B illustrates thedeposition-target substrate 3107 on which light-emitting layers 3151 a,3151 b, and 3151 c are formed on first electrode layers 3150 a, 3150 b,and 3150 c, respectively using the deposition substrate of FIG. 27A. Thelight-emitting layers 3151 a, 3151 b, and 3151 c are continuouslyprovided, but electrically isolated by a partition wall 3153 and thefirst electrode layers 3150 a, 3150 b, and 3150 c formed in therespective pixels.

When there is a space (a distance) between the first heat-insulatinglayer 103 a in the first region and the second heat-insulating layer 103b in the second region, it is possible to increase the heat conductionpath from the light absorption layer 104 in the first region to theorganic compound-containing layer 105 in the second region. Therefore,the time for the heat generated in the light absorption layer 104 in thefirst region to reach the second region increases. Furthermore, the heatis absorbed or diffused to be dissipated while passing through the firstheat-insulating layer 103 a, the first substrate 101, and the secondheat-insulating layer 103 b. It is preferable that the heat conductionpath include elements made of different materials, such as the firstheat-insulating layer 103 a, the first substrate 101, and the secondheat-insulating layer 103 b, because more heat can be absorbed ordiffused to be dissipated when passing therethrough. Thus, a large partof the organic compound-containing layer 105 in the second region can beleft in the deposition substrate; therefore, the film 111 reflecting thepattern of the first region can be selectively deposited in a finepattern on the second substrate 107 that is a deposition-targetsubstrate. In addition, even when lamp light, which requires a longerirradiation time than laser light, is used, the organiccompound-containing layer 105 in the second region can be prevented frombeing heated and the temperature difference between the first region andthe second region can be kept; thus, a lamp can be used as a lightsource. A larger area can be treated at a time with lamp light ascompared with laser light, resulting in reduction in manufacturing timeand improvement in throughput.

As the light 110 to be emitted, laser light or lamp light can be used.

There is no particular limitation on the emitted light, and one or acombination of infrared light, visible light, and ultraviolet light canbe used. For example, light (lamp light) emitted from an ultraviolet raylamp, a black light, a halogen lamp, a metal halide lamp, a xenon arclamp, a carbon arc lamp, a high-pressure sodium vapor lamp, or ahigh-pressure mercury vapor lamp may be used. In that case, the lamplight source may be continuously activated for a required time, or maybe activated plural times.

Alternatively, laser light may be used as the light. As a laser, a lasercapable of emitting ultraviolet light, visible light, or infrared lightcan be used. Laser light with various wavelengths can be used, and forexample, laser light with a wavelength of 355 nm, 515 nm, 532 nm, 1030nm, or 1064 nm can be used.

As the laser light, light emitted from one or more of the following canbe used: a gas laser such as an Ar laser, a Kr laser, and an excimerlaser; a laser whose medium is single crystal YAG, YVO₄, forsterite(Mg₂SiO₄), YAlO₃, or GdVO₄, or polycrystalline (ceramic) YAG, Y₂O₃,YVO₄, YAlO₃, or GdVO₄ that is doped with one or more of Nd, Yb, Cr, Ti,Ho, Er, Tm, and Ta as a dopant; and a solid-state laser such as a glasslaser, a ruby laser, an alexandrite laser, a Ti:sapphire laser, and afiber laser. Alternatively, a second harmonic, a third harmonic, orother higher harmonics emitted from the aforementioned solid-state lasercan also be used. The use of a solid-state laser whose laser medium issolid is advantageous in that maintenance-free condition can bemaintained for a long time and output power is relatively stable.

The laser spot preferably has a linear or rectangular shape. The linearor rectangular laser spot allows the processed substrate to beefficiently scanned with the laser light. Thus, time necessary fordeposition (takt time) is reduced, resulting in improvement ofproductivity. The laser spot may also have an elliptical shape.

In the present invention, the organic compound-containing layer 105 isheated not with radiation heat from light emitted from a light sourcebut with heat provided by the light absorption layer 104 that absorbslight from the light source. With the use of the present invention, theheat can be prevented from being conducted in a surface direction fromthe first region to the second region; therefore, an area of the organiccompound-containing layer 105, which is heated, is not enlarged anddeposition can be performed in a precise pattern. The light irradiationtime is preferably set to be short if a more precise pattern isdeposited.

In addition, deposition by light irradiation is preferably performed ina reduced-pressure atmosphere. Accordingly, it is preferable that thedeposition chamber have a pressure of 5×10⁻³ Pa or less, and morepreferably 10⁻⁶ Pa to 10⁻⁴ Pa.

Furthermore, as the light 110 to be emitted, it is preferable to uselaser light having a repetition rate of 10 MHz or more and a pulse widthof 100 fs to 10 ns. By using such laser light having a very short pulsewidth, thermal conversion is efficiently performed in the lightabsorption layer 104 so that a material can be heated efficiently.

Since the laser light having a repetition rate of 10 MHz or more and apulse width of 100 fs to 10 ns can be emitted in a short time, thermaldiffusion can be suppressed and a fine pattern can be deposited. Inaddition, the laser light having a repetition rate of 10 MHz or more anda pulse width of 100 fs to 10 ns can emit high output power; thus, alarge area can be treated at a time and time necessary for depositioncan be reduced, resulting in improvement of productivity.

When the distance between the surface of the first substrate 101 and thesurface of the second substrate 107 is reduced, the outermost layer ofthe first substrate 101 touches the outermost layer of the secondsubstrate 107 in some cases. By reducing the distance between thesurface of the first substrate 101 and the surface of the secondsubstrate 107, the film 111 can be deposited in an accurate pattern onthe second substrate 107 by light irradiation.

In the case where light passing through the opening of the reflectivelayer 102 may spread, the opening of the reflective layer 102 may bereduced in size in consideration of the spreading of emitted light.

In the case where a full-color display is manufactured, light-emittinglayers need to be selectively formed. The deposition method of thepresent invention makes it easy to form light-emitting layersselectively in a desired pattern. In addition, light-emitting layers canbe selectively formed with high accuracy.

With the use of the present invention, the thickness of a film depositedon the second substrate that is a deposition-target substrate can becontrolled by controlling the thickness of the organiccompound-containing layer formed over the first substrate. That is, thethickness of the organic compound-containing layer formed over the firstsubstrate is controlled in advance so that the film formed on the secondsubstrate has a desired thickness when all the material contained in theorganic compound-containing layer is deposited; therefore, a thicknessmonitor is not necessary in the deposition on the second substrate.Accordingly, the practitioner does not need to adjust the depositionrate by using a thickness monitor, and thus the deposition process canbe fully automated, resulting in improvement of productivity.

By applying the present invention, the materials contained in theorganic compound-containing layer 105 formed over the first substratecan be deposited uniformly. Even in the case where the organiccompound-containing layer 105 contains plural kinds of materials, a filmcontaining the same materials in substantially the same weight ratio asthe organic compound-containing layer 105 can be deposited on the secondsubstrate that is a deposition-target substrate. Accordingly, even inthe case where plural kinds of materials with different depositiontemperatures are used for deposition, in the deposition method of thepresent invention, unlike in co-evaporation, the evaporation rate ofeach material does not need to be controlled. Therefore, withoutcomplicated control of the evaporation rate or the like, a desired layercontaining different kinds of materials can be deposited easily andaccurately.

By the deposition method of the present invention, desired materials canbe deposited on a deposition-target substrate without being wasted.Thus, material use efficiency can be increased, resulting in reductionin production cost. Furthermore, materials can be prevented from beingattached to an inner wall of a deposition chamber, and thus maintenanceof the deposition apparatus can be facilitated.

By applying the present invention, a flat even film can be deposited. Inaddition, since a film can be deposited only in a desired region, a finepattern can be formed and a high-definition light-emitting device can bemanufactured.

By applying the present invention, a film can be selectively depositedin a desired region when deposition is performed using light. Thus,material use efficiency can be increased, and a desired shape can bedeposited easily and accurately, resulting in improvement ofproductivity. By applying the present invention, a lamp can be used as alight source when deposition is performed using light. Therefore, alarge area can be treated at a time, resulting in improvement ofproductivity.

Embodiment Mode 2

In this embodiment mode, other examples of the deposition substrate thatcan be used in the present invention will be described with reference toFIGS. 3A to 3D, FIGS. 4A to 4E, FIGS. 18A to 18C, FIGS. 19A to 19D, andFIGS. 20A to 20C. Materials and manufacturing methods similar to thoseof Embodiment Mode 1 may be used if the function thereof is the same asthat of Embodiment Mode 1.

FIG. 3A illustrates an example in which a light absorption layer isprovided in both the first region and the second region. A first lightabsorption layer 104 a is provided over the first heat-insulating layer103 a in the first region, and a second light absorption layer 104 b isprovided over the reflective layer 102 and the second heat-insulatinglayer 103 b in the second region.

FIG. 3B illustrates a structure in which a light absorption layer isformed over the entire surface of the first region and the second regionand is not etched. The light absorption layer is also provided betweenthe first heat-insulating layer 103 a and the second heat-insulatinglayer 103 b. Even when the light absorption layer is thus formed overthe entire surface, a deposition region has unevenness due to the firstheat-insulating layer 103 a and the second heat-insulating layer 103 b.Accordingly, the light absorption layer is not continuously deposited,but is divided between the first region and the second region.

Even when the second light absorption layer 104 b and the third lightabsorption layer 104 c are provided in the second region, they are notirradiated with light because the emitted light is reflected by thereflective layer 102. Thus, heat is not generated in the second lightabsorption layer 104 b and the third light absorption layer 104 c;therefore, heat necessary for deposition is not supplied to the organiccompound-containing layer over the second light absorption layer 104 band the third light absorption layer 104 c.

FIGS. 3C and 3D each illustrate an example in which the secondheat-insulating layer 103 b is formed over the first substrate 101 andthen the reflective layer 102 is formed thereover. The firstheat-insulating layer 103 a and the second heat-insulating layer 103 bare formed over the first substrate 101 so as to be separated from eachother, and the reflective layer 102 is formed over the secondheat-insulating layer 103 b in the second region. Then, the lightabsorption layers are formed in the first region and the second region,and the organic compound-containing layer 105 is formed thereover. FIG.3C illustrates an example in which the first light absorption layer 104a and the second light absorption layer 104 b are selectively formedover the first heat-insulating layer 103 a and the secondheat-insulating layer 103 b, respectively. FIG. 3D illustrates anexample in which the light absorption layer is formed over the entiresurface of the first region and the second region, so that the thirdlight absorption layer 104 c is provided between the firstheat-insulating layer 103 a and the second heat-insulating layer 103 b.The etching step of the light absorption layer is not needed in thestructures illustrated in FIGS. 3B and 3D, resulting in processsimplification.

FIGS. 4A to 4E each illustrate a structure in which a thirdheat-insulating layer 112 is further provided over the secondheat-insulating layer 103 b. FIGS. 4A to 4D correspond to FIGS. 3A to3D, respectively, and FIG. 4E corresponds to FIG. 1A.

In FIGS. 4A and 4B, the third heat-insulating layer 112 is provided overthe second light absorption layer 104 b in the second region, and thereflective layer 102, the second heat-insulating layer 103 b, the secondlight absorption layer 104 b, the third heat-insulating layer 112, andthe organic compound-containing layer 105 are stacked in this order.

In FIGS. 4C and 4D, the third heat-insulating layer 112 is provided overthe second light absorption layer 104 b in the second region, and thesecond heat-insulating layer 103 b, the reflective layer 102, the secondlight absorption layer 104 b, the third heat-insulating layer 112, andthe organic compound-containing layer 105 are stacked in this order.

In FIG. 4E, the third heat-insulating layer 112 is provided over thesecond heat-insulating layer 103 b in the second region, and thereflective layer 102, the second heat-insulating layer 103 b, the thirdheat-insulating layer 112, and the organic compound-containing layer 105are stacked in this order.

When the third heat-insulating layer 112 is provided over the secondheat-insulating layer 103 b in the second region as illustrated in FIGS.4A to 4E, the heat conduction path from the light absorption layer inthe first region to the organic compound-containing layer 105 in thesecond region is further increased. Thus, heat generated in the lightabsorption layer in the first region is dissipated before reaching theorganic compound-containing layer 105. Accordingly, a fine pattern canbe deposited while preventing deformed patterns more in deposition. Notethat the material and deposition method of the third heat-insulatinglayer 112 may be similar to those of the first heat-insulating layer 103a and the second heat-insulating layer 103 b. However, the transmittanceof the material of the third heat-insulating layer 112, unlike the firstheat-insulating layer 103 a, is not particularly limited. In addition,the third heat-insulating layer 112 can be made to function as a spacerto control the distance between the deposition substrate and thedeposition-target substrate when the third heat-insulating layer 112 isplaced facing the deposition substrate.

FIGS. 18A to 18C, FIGS. 19A to 19D, and FIGS. 20A to 20C each illustratean example in which a first heat-insulating layer and a secondheat-insulating layer are formed by processing the first substrate.Thus, the first heat-insulating layer and the second heat-insulatinglayer are projections on the surface of the first substrate, which areparts of the first substrate and considered to be a firstheat-insulating layer region and a second heat-insulating layer region.In this specification, the first heat-insulating layer region and thesecond heat-insulating layer region that are parts of the firstsubstrate are also referred to as the first heat-insulating layer andthe second heat-insulating layer, respectively.

In FIGS. 18A to 18C, the first substrate 121 is etched to form a firstheat-insulating layer 113 a and a second heat-insulating layer 113 b asprojections on the surface of the first substrate 121. In FIG. 18A, thelight absorption layer 104 is formed over the first heat-insulatinglayer 113 a in the first region, and the reflective layer 102 is formedover the second heat-insulating layer 113 b in the second region.

FIG. 18B illustrates an example in which the light absorption layer isalso formed in the second region. In the first region, the first lightabsorption layer 104 a is formed over the first heat-insulating layer113 a, and in the second region, the second light absorption layer 104 bis formed over the second heat-insulating layer 113 b and the reflectivelayer 102.

FIG. 18C illustrates an example in which the reflective layer is alsoformed in the first region. In the first region, a first reflectivelayer 102 a is formed over the first heat-insulating layer 113 a and thelight absorption layer 104, and in the second region, a secondreflective layer 102 b is formed over the second heat-insulating layer113 b. Even when the reflective layer is thus formed in the firstregion, heat generated in the light absorption layer can be supplied tothe organic compound-containing layer if the light absorption layer isformed before the reflective layer is formed so as to absorb light.

FIGS. 19A to 19D each illustrate an example in which the thirdheat-insulating layer 112 is provided over the second heat-insulatinglayer 113 b. FIGS. 19A to 19C correspond to FIGS. 18A to 18C,respectively.

In FIG. 19A, the third heat-insulating layer 112 is provided over thereflective layer 102 in the second region, and the secondheat-insulating layer 113 b, the reflective layer 102, the thirdheat-insulating layer 112, and the organic compound-containing layer 105are stacked in this order.

In FIG. 19B, the third heat-insulating layer 112 is provided over thesecond light absorption layer 104 b in the second region, and the secondheat-insulating layer 113 b, the reflective layer 102, the second lightabsorption layer 104 b, the third heat-insulating layer 112, and theorganic compound-containing layer 105 are stacked in this order.

In FIG. 19C, the third heat-insulating layer 112 is provided over thesecond reflective layer 102 b in the second region, and the secondheat-insulating layer 113 b, the second reflective layer 102 b, thethird heat-insulating layer 112, and the organic compound-containinglayer 105 are stacked in this order.

FIG. 19D illustrates an example in which the opening (the distance)between the first heat-insulating layer 113 a and the secondheat-insulating layer 113 b is increased in the thickness direction ofthe first substrate 121, and a third heat-insulating layer 112 c isformed between the first heat-insulating layer 113 a and the secondheat-insulating layer 113 b. In FIG. 19D, the third heat-insulatinglayer 112 b and a third heat-insulating layer 112 c are formed in thesecond region.

FIGS. 20A to 20C each illustrate an example in which the secondheat-insulating layer is not formed over the first substrate 121 in thesecond region, and the third heat-insulating layer 112 is provided overthe reflective layer.

In FIG. 20A, a heat-insulating layer 113 is provided over the firstsubstrate 121 in the first region. In the second region, the thirdheat-insulating layer 112 is formed over the reflective layer 102 so asto have a distance from the heat-insulating layer 113.

In FIG. 20B, the heat-insulating layer 113 is provided over the firstsubstrate 121 in the first region. In the second region, the thirdheat-insulating layer 112 is formed over the reflective layer 102 andthe second light absorption layer 104 b so as to have a distance fromthe heat-insulating layer 113.

In FIG. 20C, the heat-insulating layer 113 is provided over the firstsubstrate 121 in the first region. In the second region, the thirdheat-insulating layer 112 is formed over the second reflective layer 102b so as to have a distance from the heat-insulating layer 113.

When the deposition substrates illustrated in FIGS. 3A to 3D, FIGS. 4Ato 4E, FIGS. 18A to 18C, FIGS. 19A to 19D, and FIGS. 20A to 20C areirradiated with light in a manner similar to that shown in EmbodimentMode 1, a film can be deposited in a desired pattern on adeposition-target substrate. Accordingly, effects similar to those ofEmbodiment Mode 1 can be obtained using the deposition substrates shownin this embodiment mode.

In the present invention, a thin film can be formed in a fine pattern ona deposition-target substrate without providing a mask between amaterial and the deposition-target substrate.

Embodiment Mode 3

In this embodiment mode, a method for manufacturing a light-emittingdevice capable of full-color display will be described, which isrealized by forming EL layers of light-emitting elements with the use ofa plurality of the deposition substrates described in Embodiment Modes 1and 2.

In the present invention, in one deposition process, EL layers made ofthe same material can be formed on a plurality of electrodes formed onthe second substrate that is a deposition-target substrate. Also in thepresent invention, an EL layer emitting one of the three differentcolors can be formed on a plurality of electrodes formed on the secondsubstrate, whereby a light-emitting device capable of full-color displaycan be manufactured.

First, three deposition substrates that are illustrated in, for example,FIG. 1A in Embodiment Mode 1 are prepared. Each deposition substrateincludes an organic compound-containing layer for forming an EL layeremitting a different color. Specifically, the following substrates areprepared: a first deposition substrate including an organiccompound-containing layer (R) for forming an EL layer emitting red light(an EL layer (R)); a second deposition substrate including an organiccompound-containing layer (G) for forming an EL layer emitting greenlight (an EL layer (G)); and a third deposition substrate including anorganic compound-containing layer (B) for forming an EL layer emittingblue light (an EL layer (B)).

In addition, one deposition-target substrate including a plurality offirst electrodes is prepared. Note that the edges of the plurality offirst electrodes on the deposition-target substrate are covered with aninsulating layer; thus, a light-emitting region corresponds to part ofthe first electrode, which does not overlap the insulating layer and isexposed.

As a first deposition process, the deposition-target substrate is placedfacing the first deposition substrate and alignment of the substrates isperformed in a manner similar to that of FIGS. 1A to 1D. Note that thedeposition-target substrate preferably includes an alignment marker. Itis preferable that the first deposition substrate also include analignment marker. Since the first deposition substrate includes a lightabsorption layer, part of the light absorption layer, which is on theperiphery of the alignment marker, is preferably removed in advance.Furthermore, since the first deposition substrate includes the organiccompound-containing layer (R), part of the organic compound-containinglayer (R), which is on the periphery of the alignment marker, is alsopreferably removed in advance.

Then, light is emitted from the back surface of the first depositionsubstrate (the surface that does not include the reflective layer 102,the heat-insulating layer 103, the light absorption layer 104, and theorganic compound-containing layer 105 illustrated in FIGS. 1A to 1D).The light absorption layer absorbs the emitted light and supplies heatto the organic compound-containing layer (R) to heat the materialcontained in the organic compound-containing layer (R), whereby an ELlayer (R) is formed on some of the first electrodes on thedeposition-target substrate. After the first deposition process iscompleted, the first deposition substrate is moved away from thedeposition-target substrate.

Then, as a second deposition process, the deposition-target substrate isplaced facing the second deposition substrate and alignment of thesubstrates is performed. The second deposition substrate includes areflective layer having an opening at a position that is shifted by onepixel from the opening of the reflective layer of the first depositionsubstrate used in the first deposition process.

Then, light is emitted from the back surface of the second depositionsubstrate (the surface that does not include the reflective layer 102,the heat-insulating layer 103, the light absorption layer 104, and theorganic compound-containing layer 105 illustrated in FIGS. 1A to 1D).The light absorption layer absorbs the emitted light and supplies heatto the organic compound-containing layer (G) to heat the materialcontained in the organic compound-containing layer (G), whereby an ELlayer (G) is formed on some of the first electrodes on thedeposition-target substrate, which are next to the first electrodes onwhich the EL layer (R) has been formed in the first deposition process.After the second deposition process is completed, the second depositionsubstrate is moved away from the deposition-target substrate.

Next, as a third deposition process, the deposition-target substrate isplaced facing the third deposition substrate and alignment of thesubstrates is performed. The third deposition substrate includes areflective layer having an opening at a position that is shifted by twopixels from the opening of the reflective layer of the first depositionsubstrate used in the first deposition process.

Then, light is emitted from the back surface of the third depositionsubstrate (the surface that does not include the reflective layer 102,the heat-insulating layer 103, the light absorption layer 104, and theorganic compound-containing layer 105 illustrated in FIGS. 1A to 1D).The state just before the third deposition process corresponds to a topview of FIG. 10A. In FIG. 10A, a reflective layer 401 includes anopening 402. Accordingly, light passing through the opening 402 of thereflective layer 401 of the third deposition substrate is transmittedthrough the heat-insulating layer and absorbed by the light absorptionlayer. In addition, the first electrode is formed in a region of thedeposition-target substrate, which overlaps the opening 402 of the thirddeposition substrate. Note that an EL layer (R) 411 that has been formedin the first deposition process and an EL layer (G) 412 that has beenformed in the second deposition process are placed under the regionsindicated by dotted lines in FIG. 10A.

Then, an EL layer (B) 413 is formed in the third deposition process. Thelight absorption layer absorbs the emitted light and supplies heat tothe organic compound-containing layer (B) to heat the material containedin the organic compound-containing layer (B), whereby an EL layer (B)413 is formed on some of the first electrodes on the deposition-targetsubstrate, which are next to the first electrodes on which the EL layer(G) has been formed in the second deposition process. After the thirddeposition process is completed, the third deposition substrate is movedaway from the deposition-target substrate.

In this manner, the EL layer (R) 411, the EL layer (G) 412, and the ELlayer (B) 413 can be formed at regular intervals on the samedeposition-target substrate. Then, a second electrode is formed overthese layers, whereby light-emitting elements can be formed.

Through the above steps, light-emitting elements that emit differentcolors are formed over the same substrate, whereby a light-emittingdevice capable of full-color display can be formed.

FIGS. 10A and 10B illustrate an example in which the opening 402 of thereflective layer formed over the deposition substrate has a rectangularshape. However, the present invention is not particularly limited tothis example and stripe openings may be employed. In the case of thestripe openings, although deposition is also performed betweenlight-emitting regions emitting the same color, the deposition betweenthe light-emitting regions is performed over an insulating layer 414,and thus a portion overlapping the insulating layer 414 does not serveas a light-emitting region.

Similarly, there is no particular limitation on the arrangement of thepixels. The shape of each pixel may be a polygon, for example, a hexagonas illustrated in FIG. 11A, and a full-color light-emitting device maybe realized by the arrangement of an EL layer (R) 511, an EL layer (G)512, and an EL layer (B) 513. In order to form the polygonal pixelsillustrated in FIG. 11A, deposition may be performed using a depositionsubstrate illustrated in FIG. 11B, which includes a reflective layer 501having polygonal openings 502.

In manufacturing the full-color light-emitting device shown in thisembodiment mode, the thickness of a film deposited on thedeposition-target substrate can be controlled by controlling thethickness of the organic compound-containing layer formed over thedeposition substrate. That is, the thickness of the organiccompound-containing layer formed over the deposition substrate iscontrolled in advance so that the film formed on the deposition-targetsubstrate has a desired thickness when all materials contained in theorganic compound-containing layer are deposited; therefore, a thicknessmonitor is not necessary in the deposition on the deposition-targetsubstrate. Accordingly, the practitioner does not need to adjust thedeposition rate by using a thickness monitor, and thus the depositionprocess can be fully automated, resulting in improvement ofproductivity.

In manufacturing the full-color light-emitting device shown in thisembodiment mode, the materials contained in the organiccompound-containing layer formed over the deposition substrate can beuniformly deposited by applying the present invention. Even in the casewhere the organic compound-containing layer contains plural kinds ofmaterials, a film containing the same materials in substantially thesame weight ratio as the organic compound-containing layer can bedeposited on the deposition-target substrate. Accordingly, even in thecase where plural kinds of materials with different depositiontemperatures are used for deposition, with the deposition method of thepresent invention, a desired layer containing different kinds ofmaterials can be deposited easily and accurately without complicatedcontrol of the evaporation rate or the like.

By applying the present invention in manufacturing the full-colorlight-emitting device shown in this embodiment mode, desired materialscan be deposited on a deposition-target substrate without being wasted.Thus, material use efficiency can be increased, resulting in reductionin production cost. Furthermore, materials can be prevented from beingattached to an inner wall of a deposition chamber, and thus maintenanceof the deposition apparatus can be facilitated.

By applying the present invention in manufacturing the full-colorlight-emitting device shown in this embodiment mode, a flat even filmcan be deposited. In addition, a fine pattern can be formed, and thus ahigh-definition light-emitting device can be manufactured.

By applying the present invention, a film can be selectively depositedin a desired region when deposition is performed using light. Thus,material use efficiency can be increased, and a desired shape can bedeposited easily and accurately, resulting in improvement ofproductivity. In addition, since high output power light can be used asa light source in the present invention, a large area can be depositedat a time. Accordingly, time necessary for deposition (takt time) can bereduced, resulting in improvement of productivity.

Note that the structure shown in this embodiment mode can be used inappropriate combination with the structures shown in Embodiment Modes 1and 2.

Embodiment Mode 4

In this embodiment mode, a method for manufacturing a light-emittingelement and a light-emitting device by applying the present inventionwill be described.

For example, light-emitting elements illustrated in FIGS. 12A and 12Bcan be manufactured by applying the present invention. In thelight-emitting element illustrated in FIG. 12A, a first electrode 902,an EL layer 903 including only a light-emitting layer 913, and a secondelectrode 904 are stacked in this order over a substrate 901. One of thefirst electrode 902 and the second electrode 904 functions as an anode,and the other functions as a cathode. Holes injected from the anode andelectrons injected from the cathode are recombined in the EL layer 903,whereby light emission can be obtained. In this embodiment mode, thefirst electrode 902 functions as the anode and the second electrode 904functions as the cathode.

In the light-emitting element illustrated in FIG. 12B, the EL layer 903in FIG. 12A has a structure including a plurality of stacked layers.Specifically, a hole-injecting layer 911, a hole-transporting layer 912,the light-emitting layer 913, an electron-transporting layer 914, and anelectron-injecting layer 915 are stacked in this order from the firstelectrode 902 side. Note that the EL layer 903 functions if it includesat least the light-emitting layer 913 as illustrated in FIG. 12A;therefore, not all the above layers are required and may be selected tobe provided as appropriate.

As the substrate 901 illustrated in FIGS. 12A and 12B, a substratehaving an insulating surface or an insulating substrate is employed.Specifically, it is possible to use a variety of glass substrates usedfor the electronics industry, such as an aluminosilicate glasssubstrate, an aluminoborosilicate glass substrate, or a bariumborosilicate glass substrate, as well as a quartz substrate, a ceramicsubstrate, a sapphire substrate, or the like.

For the first electrode 902 and the second electrode 904, various typesof metals, alloys, electrically conductive compounds, mixtures thereof,and the like can be used. Specifically, indium oxide-tin oxide (ITO:indium tin oxide), indium oxide-tin oxide containing silicon or siliconoxide, indium oxide-zinc oxide (IZO: indium zinc oxide), indium oxidecontaining tungsten oxide and zinc oxide, or the like can be used. It isalso possible to use gold (Au), platinum (Pt), nickel (Ni), tungsten(W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper(Cu), palladium (Pd), nitride of a metal material (such as titaniumnitride), or the like.

Films of those materials are generally deposited by sputtering. Forexample, a film of indium oxide-zinc oxide can be formed by sputteringusing a target in which zinc oxide is added to indium oxide at 1 wt % to20 wt %. A film of indium oxide containing tungsten oxide and zinc oxidecan be formed by sputtering using a target in which tungsten oxide andzinc oxide are added to indium oxide at 0.5 wt % to 5 wt % and 0.1 wt %to 1 wt %, respectively. Furthermore, films of those materials may beformed by ink-jet, spin coating, or the like by application of a sol-gelprocess or the like.

Alternatively, aluminum (Al), silver (Ag), an alloy containing aluminum,or the like can be used. It is also possible to use an element belongingto Group 1 or Group 2 of the periodic table, which has a low workfunction, that is, an alkali metal such as lithium (Li) or cesium (Cs),an alkaline earth metal such as magnesium (Mg), calcium (Ca), orstrontium (Sr), or an alloy containing these elements (e.g., an alloy ofaluminum, magnesium, and silver, or an alloy of aluminum and lithium);or a rare earth metal such as europium (Eu) or ytterbium (Yb), or analloy thereof.

A film of an alkali metal, an alkaline earth metal, or an alloycontaining such a metal can be formed by vacuum evaporation. An alloyfilm containing an alkali metal or an alkaline earth metal can also beformed by sputtering. Alternatively, silver paste or the like can bedeposited by ink-jet or the like. The first electrode 902 and the secondelectrode 904 each are not limited to a single layer film, and may be astacked-layer film.

In order to extract light emitted from the EL layer 903 to the outside,one or both of the first electrode 902 and the second electrode 904 areformed so as to transmit light. For example, one or both of the firstelectrode 902 and the second electrode 904 are formed of a conductivematerial having a light-transmitting property, such as indium tin oxide,or formed of silver, aluminum, or the like to a thickness of severalnanometers to several tens of nanometers. Alternatively, one or both ofthe first electrode 902 and the second electrode 904 can have astacked-layer structure including a thin film of a metal such as silveror aluminum and a thin film of a conductive material having alight-transmitting property, such as ITO.

The EL layer 903 (the hole-injecting layer 911, the hole-transportinglayer 912, the light-emitting layer 913, the electron-transporting layer914, or the electron-injecting layer 915) of the light-emitting elementshown in this embodiment mode can be formed by applying the depositionmethod described in Embodiment Mode 1. In addition, the electrodes canalso be formed by applying the deposition method described in EmbodimentMode 1.

A variety of materials can be used for the light-emitting layer 913. Forexample, a fluorescent compound that exhibits fluorescence or aphosphorescent compound that exhibits phosphorescence can be used.

Examples of a phosphorescent compound that can be used for thelight-emitting layer 913 are given below. As a light-emitting materialfor blue emission, there arebis[2-(4′,6′-difluorophenyl)pyridinato-N,C²′]iridium(III)tetrakis(1-pyrazolyl)borate(FIr6),bis[2-(4′,6′-difluorophenyl)pyridinato-N,C²′]iridium(III)picolinate(FIrpic),bis[2-(3′,5′-bistrifluoromethylphenyl)pyridinato-N,C²′]iridium(III)picolinate(Ir(CF₃ppy)₂(pic)),bis[2-(4′,6′-difluorophenyl)pyridinato-N,C²′]iridium(III)acetylacetonate(FIracac), and the like. As a light-emitting material for greenemission, there are tris(2-phenylpyridinato-N,C²′)iridium(III)(Ir(ppy)₃), bis(2-phenylpyridinato-N,C²′)iridium(III)acetylacetonate(Ir(ppy)₂(acac)),bis(1,2-diphenyl-1H-benzimidazolato)iridium(III)acetylacetonate(Ir(pbi)₂(acac)), bis(benzo[h]quinolinato)iridium(III)acetylacetonate(Ir(bzq)₂(acac)), and the like. As a light-emitting material for yellowemission, there arebis(2,4-diphenyl-1,3-oxazolato-N,C²′)iridium(III)acetylacetonate(Ir(dpo)₂(acac)),bis[2-(4′-(perfluorophenylphenyl)pyridinato]iridium(III)acetylacetonate(Ir(p-PF-ph)₂(acac)),bis(2-phenylbenzothiazolato-N,C²′)iridium(III)acetylacetonate(Ir(bt)₂(acac)), and the like. As a light-emitting material for orangeemission, there are tris(2-phenylquinolinato-N,C²′)iridium(III)(Ir(pq)₃), bis(2-phenylquinolinato-N,C²′)iridium(III)acetylacetonate(Ir(pq)₂(acac)), and the like. As a light-emitting material for redemission, there are organic metal complexes such asbis[2-(2′-benzo[4,5-α]thienyl)pyridinato-NC³′)iridium(III)acetylacetonate(Ir(btp)₂(acac)),bis(1-phenylisoquinolinato-N,C²′)iridium(III)acetylacetonate(Ir(piq)₂(acac),(acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III)(Ir(Fdpq)₂(acac)), and 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphineplatinum(II) (PtOEP). In addition, rare earth metal complexes such astris(acetylacetonato)(monophenanthroline)terbium(III) (Tb(acac)₃(Phen)),tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III)(Eu(DBM)₃(Phen)), andtris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III)(Eu(TTA)₃(Phen)) emit light from a rare earth metal ion (electrontransition between different multiplicities); therefore, such rare earthmetal complexes can be used as phosphorescent compounds.

Examples of a fluorescent compound that can be used for thelight-emitting layer 913 are given below. As a light-emitting materialfor blue emission, there areN,N′-bis[4-(9H-carbazol-9-yl)phenyl]-N,N′-diphenylstilbene-4,4′-diamine(YGA2S), 4-(9H-carbazol-9-yl)-4′-(10-phenyl-9-anthryl)triphenylamine(YGAPA), and the like. As a light-emitting material for green emission,there are N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine(2PCAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine(2PCABPhA),N-(9,10-diphenyl-2-anthryl)-N,N′,N′-triphenyl-1,4-phenylenediamine2DPAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,N′,N′-triphenyl-1,4-phenylenediamine(2DPABPhA),9,10-bis(1,1′-biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracene-2-amine(2YGABPhA), N,N,9-triphenylanthracene-9-amine (DPhAPhA), and the like.As a light-emitting material for yellow emission, there are rubrene,5,12-bis(1,1′-biphenyl-4-yl)-6,11-diphenyltetracene (BPT), and the like.As a light-emitting material for red emission, there areN,N,N′,N′-tetrakis(4-methylphenyl)tetracene-5,11-diamine (p-mPhTD),7,13-diphenyl-N,N,N′,N′-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine(p-mPhAFD), and the like.

The light-emitting layer 913 may have a structure in which a substancehaving a high light-emitting property (a dopant material) is dispersedin another substance (a host material), whereby crystallization of thelight-emitting layer can be suppressed. In addition, concentrationquenching due to high concentration of the substance having a highlight-emitting property can be suppressed.

As the substance in which the substance having a high light-emittingproperty is dispersed, when the substance having a high light-emittingproperty is a fluorescent compound, a substance having higher singletexcitation energy (the energy difference between a ground state and asinglet excited state) than the fluorescent compound is preferably used.When the substance having a high light-emitting property is aphosphorescent compound, a substance having higher triplet excitationenergy (the energy difference between a ground state and a tripletexcited state) than the phosphorescent compound is preferably used.

As the host material used for the light-emitting layer 913, there are4,4′-di(9-carbazolyl)biphenyl (CBP),2-tert-butyl-9,10-di(2-naphthyl)anthracene (t-BuDNA),9-[4-(9-carbazolyl)phenyl]-10-phenylanthracene (CzPA), and the like aswell as 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB),tris(8-quinolinolato)aluminum(III) (Alq),4,4′-bis[N-(9,9-dimethylfluoren-2-yl)-N-phenylamino]biphenyl (DFLDPBi),bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (BAlq),and the like.

As the dopant material, any of the aforementioned phosphorescentcompounds and fluorescent compounds can be used.

When the light-emitting layer 913 has a structure in which a substancehaving a high light-emitting property (a dopant material) is dispersedin another substance (a host material), a mixed layer of a host materialand a guest material is formed as the organic compound-containing layerover the deposition substrate. Alternatively, the organiccompound-containing layer over the deposition substrate may have astacked structure of a layer containing a host material and a layercontaining a dopant material. By forming the light-emitting layer 913using the deposition substrate provided with the organiccompound-containing layer having such a structure, the light-emittinglayer 913 contains a substance in which a light-emitting material isdispersed (a host material) and a substance having a high light-emittingproperty (a dopant material), and has a structure in which the substancehaving a high light-emitting property (the dopant material) is dispersedin the substance in which a light-emitting material is dispersed (thehost material). Note that for the light-emitting layer 913, two or morekinds of host materials and a dopant material may be used, or two ormore kinds of dopant materials and a host material may be used.Alternatively, two or more kinds of host materials and two or more kindsof dopant materials may be used.

In the case where the light-emitting element illustrated in FIG. 12B isformed, the deposition substrates shown in Embodiment Mode 1, each ofwhich has an organic compound-containing layer formed of a material forforming each layer in the EL layer 903 (the hole-injecting layer 911,the hole-transporting layer 912, the light-emitting layer 913, theelectron-transporting layer 914, and the electron-injecting layer 915)are prepared for the respective layers, and deposition of each layer isperformed using a different deposition substrate by the method shown inEmbodiment Mode 1, whereby the EL layer 903 can be formed over the firstelectrode 902 over the substrate 901. Then, the second electrode 904 isformed over the EL layer 903, and thus the light-emitting elementillustrated in FIG. 12B can be obtained. Although all the layers in theEL layer 903 can be formed by the method shown in Embodiment Mode 1 inthat case, only some of the layers in the EL layer 903 may be formed bythe method shown in Embodiment Mode 1.

In the case where films are stacked over a deposition-target substrateby a wet process, a liquid composition containing a material is directlyattached to a lower film, and thus the lower film is dissolved dependingon a solvent contained in the composition; therefore, materials that canbe stacked are limited. However, in the case where films are stacked bythe deposition method of the present invention, there is no need toconsider the effect of the solvent on the lower film because the solventis not directly attached to the lower film. Accordingly, the presentinvention increases the flexibility of materials that can be stacked. Ifa film is directly formed on a deposition-target substrate by a wetprocess, heat treatment needs to be performed under conditions that donot affect the lower film that has been deposited on thedeposition-target substrate; therefore, film quality cannot besufficiently improved in some cases.

The hole-injecting layer 911 can be formed of molybdenum oxide, vanadiumoxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like.Alternatively, the hole-injecting layer 911 can be formed of aphthalocyanine-based compound such as phthalocyanine (H₂Pc) or copperphthalocyanine (CuPc), a high molecular compound such aspoly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS),or the like.

As the hole-injecting layer 911, a layer that contains a substancehaving a high hole-transporting property and a substance having anelectron-accepting property can be used. The layer that contains asubstance having a high hole-transporting property and a substancehaving an electron-accepting property has a high carrier density and anexcellent hole-injecting property. When the layer that contains asubstance having a high hole-transporting property and a substancehaving an electron-accepting property is used as a hole-injecting layerthat is in contact with an electrode functioning as an anode, a varietyof metals, alloys, electrically conductive compounds, mixtures thereof,and the like can be used for the electrode regardless of the magnitudeof work function of a material of the electrode functioning as an anode.

As the substance having an electron-accepting property, which is usedfor the hole-injecting layer 911,7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (F4-TCNQ),chloranil, and the like can be used. Alternatively, a transition metaloxide can also be used. Still other examples are oxides of a metalbelonging to Group 4 to Group 8 of the periodic table. Specifically,vanadium oxide, niobium oxide, tantalum oxide, chromium oxide,molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide arepreferably used because of their high electron accepting properties.Among them, molybdenum oxide is especially preferable because it isstable even in the air, has a low hygroscopic property, and is easy tobe handled.

As the substance having a high hole-transporting property, which is usedfor the hole-injecting layer 911, various compounds such as an aromaticamine compound, a carbazole derivative, an aromatic hydrocarbon, and ahigh molecular compound (such as oligomer, dendrimer, and polymer) canbe used. Note that it is preferable that the substance having a highhole-transporting property used for the hole-injecting layer be asubstance having a hole mobility of 10⁻⁶ cm²/Vs or more. Note that anyother substances may also be used as long as the hole-transportingproperties thereof are higher than the electron-transporting propertiesthereof. Specific examples of the substance having a highhole-transporting property, which can be used for the: hole-injectinglayer 911, are given below.

As the aromatic amine compound that can be used for the hole-injectinglayer 911, there are 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPB),N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine(TPD), 4,4′,4″-tris(N,N-diphenylamino)triphenylamine (TDATA),4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (MTDATA),4,4′-bis[N-(spiro-9,9′-bifluoren-2-yl)-N-phenylamino]biphenyl (BSPB),and the like. In addition, there are alsoN,N′-bis(4-methylphenyl)(p-tolyl)-N,N′-diphenyl-p-phenylenediamine(DTDPPA), 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl(DPAB),4,4′-bis(N-{4-[N′-(3-methylphenyl)-N′-phenylamino]phenyl}-N-phenylamino)biphenyl(DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene(DPA3B), and the like.

As the carbazole derivative that can be used for the hole-injectinglayer 911, specifically,3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (PCzPCA1),3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(PCzPCA2),3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole(PCZPCN1), and the like can be used.

In addition, as the carbazole derivative that can be used for thehole-injecting layer 911, there are also 4,440 -di(N-carbazolyl)biphenyl(CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (TCPB),9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (CzPA),1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, and thelike.

As the aromatic hydrocarbon that can be used for the hole-injectinglayer 911, there are 2-tert-butyl-9,10-di(2-naphthyl)anthracene(t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene,9,10-bis(3,5-diphenylphenyl)anthracene (DPPA),2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (t-BuDBA),9,10-di(2-naphthyl)anthracene (DNA), 9,10-diphenylanthracene (DPAnth),2-tert-butylanthracene (t-BuAnth),9,10-bis(4-methyl-1-naphthyl)anthracene (DMNA),9,10-bis[2-(1-naphthyl)phenyl]-2-tert-butyl-anthracene,9,10-bis[2-(1-naphthyl)phenyl]anthracene,2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene,2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9′-bianthryl,10,10′-diphenyl-9,9′-bianthryl,10,10′-bis(2-phenylphenyl)-9,9-bianthryl, 10,10′-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9′-bianthryl, anthracene, tetracene,rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, and the like.Besides, pentacene, coronene, and the like can also be used. Asdescribed above, an aromatic hydrocarbon having a hole mobility of1×10⁻⁶ cm²/Vs or more and having 14 to 42 carbon atoms is morepreferably used.

The aromatic hydrocarbon that can be used for the hole-injecting layer911 may have a vinyl skeleton. As the aromatic hydrocarbon having avinyl skeleton, there are 4,4′-bis(2,2-diphenylvinyl)biphenyl (DPVBi),9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (DPVPA), and the like.

Since the layer that contains a substance having a highhole-transporting property and a substance having an electron-acceptingproperty is excellent not only in hole-injecting properties but also inhole-transporting properties, and thus the aforementioned hole-injectinglayer 911 may be used as the hole-transporting layer.

The hole-transporting layer 912 contains a substance having a highhole-transporting property. As the substance having a highhole-transporting property, there are aromatic amine compounds such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPB),N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine(TPD), 4,4′,4″-tris(N,N-diphenylamino)triphenylamine (TDATA),4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (MTDATA),and 4,4′-bis[N-(spiro-9,9′-bifluoren-2-yl)-N-phenylamino]biphenyl(BSPB), and the like. The substances described here are mainlysubstances having a hole mobility of 10⁻⁶ cm²/Vs or more. Note that anyother substances may also be used as long as the hole-transportingproperties thereof are higher than the electron-transporting propertiesthereof. Note that the layer that contains a substance having a highhole-transporting property is not limited to a single layer, but may bea stack of two or more layers that contain the aforementionedsubstances.

The electron-transporting layer 914 contains a substance having a highelectron-transporting property. As the substance having a highelectron-transporting property, there are metal complexes having aquinoline skeleton or a benzoquinoline skeleton, such astris(8-quinolinolato)aluminum (Alq),tris(4-methyl-8-quinolinolato)aluminum (Almq₃),bis(10-hydroxybenzo[h]quinolinato)beryllium (BeBq₂), andbis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (BAlq).Alternatively, metal complexes having an oxazole-based ligand or athiazole-based ligand, such as bis[2-(2-hydroxyphenyl)benzoxazolato]zinc(Zn(BOX)₂) and bis[2-(2-hydroxyphenyl)benzothiazolato]zinc (Zn(BTZ)₂)can be used. Furthermore, besides the metal complexes,2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD),1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (OXD-7),3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ01),bathophenanthroline (BPhen), bathocuproine (BCP), or the like can alsobe used. The substances described here are mainly substances having ahole mobility of 10⁻⁶ cm²/Vs or more. Note that any other substances mayalso be used as long as the electron-transporting properties thereof arehigher than the hole-transporting properties thereof. In addition, theelectron-transporting layer is not limited to a single layer, but may bea stack of two or more layers that contain the aforementionedsubstances.

As the electron-injecting layer 915, an alkali metal compound or analkaline earth metal compound, such as lithium fluoride (LiF), cesiumfluoride (CsF), or calcium fluoride (CaF₂) can be used. Alternatively, alayer in which a substance having an electron-transporting property iscombined with an alkali metal or an alkaline earth metal can be used.For example, a layer made of Alq containing magnesium (Mg) can be used.Note that it is preferable that the layer in which a substance having anelectron-transporting property is combined with an alkali metal or analkaline earth metal be used as the electron-injecting layer becauseelectrons are efficiently injected from the second electrode 904.

Note that there is no particular limitation on a stacked-layer structureof the EL layer 903. The EL layer 903 may be formed by an appropriatecombination of a light-emitting layer with a layer formed of a substancehaving a high electron-transporting property, a substance having a highhole-transporting property, a substance having a high electron-injectingproperty, a substance having a high hole-injecting property, a bipolarsubstance (a substance having high electron and hole-transportingproperties), or the like.

Light emission from the EL layer 903 is extracted to the outside throughone or both of the first electrode 902 and the second electrode 904.Therefore, one or both of the first electrode 902 and the secondelectrode 904 are an electrode having a light-transmitting property. Inthe case where only the first electrode 902 is an electrode having alight-transmitting property, light is extracted from the substrate 901side through the first electrode 902. In the case where only the secondelectrode 904 is an electrode having a light-transmitting property,light is extracted from the side opposite to the substrate 901 throughthe second electrode 904. In the case where both the first electrode 902and the second electrode 904 are electrodes having a light-transmittingproperty, light is extracted from both the substrate 901 side and theside opposite to the substrate 901 through the first electrode 902 andthe second electrode 904, respectively.

Note that, although FIGS. 12A and 12B illustrate the structure in whichthe first electrode 902 functioning as an anode is provided on thesubstrate 901 side, the second electrode 904 functioning as a cathodemay be provided on the substrate 901 side.

The EL layer 903 may be formed by the deposition method shown inEmbodiment Mode 1 or may be formed by a combination of the depositionmethod shown in Embodiment Mode 1 with another deposition method. Adifferent deposition method may be used to form each electrode or eachlayer. As a dry process, there are vacuum evaporation, electron beamevaporation, sputtering, and the like. As a wet process, there areink-jet, spin coating, and the like.

In the light-emitting element of this embodiment mode, an EL layer canbe formed by applying the present invention, and thus a highly accuratefilm can be formed efficiently. Therefore, not only improvement incharacteristics of the light-emitting element, but also improvement inyield and reduction in cost can be achieved.

This embodiment mode can be combined with any of Embodiment Modes 1 to 3as appropriate.

Embodiment Mode 5

In this embodiment mode, a passive matrix light-emitting devicemanufactured by the present invention will be described with referenceto FIGS. 5A and 5B, FIGS. 6A and 6B, FIGS. 7A to 7D, FIGS. 8A to 8C, andFIGS. 9A to 9D.

FIGS. 5A and 5B illustrate a light-emitting device including a passivematrix light-emitting element to which the present invention is applied.FIG. 5A is a plan view of the light-emitting device and FIG. 5B is across-sectional view taken along line Y1-Z1 of FIG. 5A.

In the light-emitting device of FIG. 5A, first electrode layers 751 a,751 b, and 751 c extending in a first direction, which are used for thelight-emitting elements; EL layers 752 a, 752 b, and 752 c that areselectively formed over the first electrode layers 751 a, 751 b, and 751c, respectively; and second electrode layers 753 a, 753 b, and 753 cextending in a second direction perpendicular to the first direction,which are used for the light-emitting elements, are formed over anelement substrate 759. An insulating layer 754 functioning as aprotective film is provided to cover the second electrode layers 753 a,753 b, and 753 c (see FIGS. 5A and 5B).

In FIGS. 5A and 5B, the first electrode layer 751 b functioning as adata line (a signal line) and the second electrode layer 753 bfunctioning as a scan line (a source line) cross each other with the ELlayer 752 b interposed therebetween, so that a light-emitting element750 is formed.

In this embodiment mode, the EL layers 752 a, 752 b, and 752 c areformed by the deposition method of the present invention shown inEmbodiment Mode 1. The method for manufacturing the light-emittingdevice of this embodiment mode illustrated in FIGS. 5A and 5B will bedescribed with reference to FIGS. 7A to 7D.

A deposition substrate illustrated in FIG. 7A has a structure similar tothat of FIG. 4E shown in Embodiment Mode 1. In the first region of thedeposition substrate, a first heat-insulating layer 703 a and a lightabsorption layer 704 are stacked in this order over a substrate 701. Inthe second region, a reflective layer 702, a second heat-insulatinglayer 703 b, and a third heat-insulating layer 712 are stacked in thisorder over the substrate 701. An organic compound-containing layer 705is formed as the uppermost layer of the deposition substrate.

First electrode layers 751 a, 751 b, and 751 c are formed on an elementsubstrate 759 that is a deposition-target substrate. The elementsubstrate 759 and the substrate 701 are placed so that the firstelectrode layers 751 a, 751 b, and 751 c face the organiccompound-containing layer 705 (see FIG. 7B). When the secondheat-insulating layer 703 b and the third heat-insulating layer 712 areformed to function as a spacer and the deposition substrate and thedeposition-target substrate are provided in contact with each other asillustrated in FIG. 7B, the pixel region in each first region can beseparated from other pixel regions. Accordingly, a material evaporatedfrom the organic compound-containing layer by light irradiation can beprevented from being attached to the other pixel regions.

Light 710 is emitted from the back surface of the substrate 701 (thesurface that does not include the organic compound-containing layer 705)so that the light absorption layer 704 generates heat, whereby at leastpart of the material contained in the organic compound-containing layer705 is deposited as EL layers 752 a, 752 b, and 752 c on the elementsubstrate 759 (see FIG. 7C). Through the above steps, the EL layers 752a, 752 b, and 752 c can be selectively formed on the first electrodelayers 751 a, 751 b, and 751 c, respectively, which are formed on thesubstrate 759 (see FIG. 7D).

The second electrode layer 753 b and the insulating layer 754 are formedover the EL layers 752 a, 752 b, and 752 c illustrated in FIG. 7D, andsealed with a sealing substrate 758, whereby a light-emitting deviceillustrated in FIG. 5B can be completed.

The light-emitting device illustrated in FIGS. 5A and 5B shows anexample in which the EL layers 752 a, 752 b, and 752 c each have a width(the width in the direction Y1-Z1) larger than that of the firstelectrode layers 751 a, 751 b, and 751 c, respectively, thereby coveringthe edges of the first electrode layers 751 a, 751 b, and 751 c. This isbecause, in FIGS. 7A to 7D, the pattern of the organiccompound-containing layers formed over the light absorption layer 704 inthe first region has a width larger than that of the pattern of thefirst electrode layers.

FIGS. 6A and 6B illustrate an example in which the EL layer is entirelyformed on the first electrode layer. FIG. 6A is a plan view of alight-emitting device and FIG. 6B is a cross-sectional view taken alongline Y2-Z2 of FIG. 6A. In the light-emitting device of FIGS. 6A and 6B,the size of EL layers 792 a, 792 b, and 792 c is smaller than that ofthe first electrode layers 751 a, 751 b, and 751 c; therefore, the ELlayers 792 a, 792 b, and 792 c are entirely formed on the firstelectrode layers 751 a, 751 b, and 751 c, respectively. In thedeposition method of the present invention, a film reflecting thepattern of the organic compound-containing layer formed over the lightabsorption layer that does not overlap the reflective layer, which isthe pattern of the first region, is deposited on the deposition-targetsubstrate. Thus, the EL layers 792 a, 792 b, and 792 c can be depositedby making the pattern of the organic compound-containing layer formedover the light absorption layer in the first region smaller than that ofthe first electrode layers 751 a, 751 b, and 751 c.

In the passive matrix light-emitting device, a partition wall (aninsulating layer) for separating light-emitting elements may beprovided. FIGS. 8A to 8C and FIGS. 9A to 9D illustrate an example of alight-emitting device having a two-layer partition wall.

FIG. 8A is a plan view of a light-emitting device, FIG. 8B is across-sectional view taken along line Y3-Z3 of FIG. 8A, and FIG. 8C is across-sectional view taken along line V3-X3 of FIG. 8A. Note that FIG.8A is a plan view illustrating the state in which a partition wall 782has just been formed, and the EL layer and the second electrode layerare omitted in FIG. 8A.

As illustrated in FIGS. 8A to 8C, a pixel region includes an openingover each of the first electrode layers 751 a, 751 b, and 751 c, and apartition wall 780 is selectively formed. As illustrated in FIG. 8B, thepartition wall 780 has a tapered shape to cover the edges of the firstelectrode layers 751 a, 751 b, and 751 c.

The partition wall 782 is selectively formed over the partition wall780. The partition wall 782 has a function to discontinuously separatethe EL layer and the second electrode layer formed over the partitionwall 780. The sidewalls of the partition wall 782 have such a slope thatthe distance between opposite sidewalls is gradually narrowed toward thesurface of the substrate. That is, a cross section in the direction of ashort side of the partition wall 782 is a trapezoid, in which a lowerbase (a base that faces a surface of the partition wall 780 and touchesthe partition wall 780) is shorter than an upper base (a base that facesthe surface of the partition wall 780 and does not touch the partitionwall 780). Since the partition wall 782 has a so-called inverselytapered shape, the EL layer 752 b is divided by the partition wall 782in a self-aligned manner and can be selectively formed over the firstelectrode layer 751 b. Thus, adjacent light-emitting elements aredivided without being processed by etching, resulting in prevention ofelectrical failure such as a short circuit between the light-emittingelements.

A method for manufacturing the light-emitting device of this embodimentmode illustrated in FIG. 8B, using the deposition method of the presentinvention, will be described with reference to FIGS. 9A to 9D.

A deposition substrate illustrated in FIG. 9A has a structure similar tothat of FIG. 19A shown in Embodiment Mode 1.

In the first region of the deposition substrate, a first heat-insulatinglayer 723 a and a light absorption layer 724 are stacked as a projectionof a substrate 721. In the second region, a reflective layer 722 isformed over a second heat-insulating layer 723 b that is a projection ofthe substrate 721, and a third heat-insulating layer 742 is stacked overthe reflective layer 722. An organic compound-containing layer 725 isformed as the uppermost layer of the deposition substrate.

First electrode layers 751 a, 751 b, and 751 c and a partition wall 780are formed on the element substrate 759 that is a deposition-targetsubstrate. The element substrate 759 and the substrate 721 are placed sothat the organic compound-containing layer 725 faces the first electrodelayers 751 a, 751 b, and 751 c and the partition wall 780 (see FIG. 9B).When the partition wall 780 and the third heat-insulating layer 742 areformed and the deposition substrate and the deposition-target substrateare provided in contact with each other as illustrated in FIG. 9B, thepixel region in each first region can be separated from other pixelregions. Accordingly, a material evaporated from the organiccompound-containing layer by light irradiation can be prevented frombeing attached to the other pixel regions.

Light 720 is emitted from the back surface of the substrate 721 (thesurface that does not include the organic compound-containing layer 725)so that the light absorption layer 724 generates heat, whereby at leastpart of the material contained in the organic compound-containing layer725 is deposited as the EL layers 752 a, 752 b, and 752 c on the elementsubstrate 759 (see FIG. 9C). Through the above steps, the EL layers 752a, 752 b, and 752 c can be selectively formed on the first electrodelayers 751 a, 751 b, and 751 c, respectively, which are formed on thesubstrate 759 (see FIG. 9D).

The second electrode layer 753 b and a fill layer 781 are formed overthe EL layers 752 a, 752 b, and 752 c illustrated in FIG. 9D, and sealedwith the sealing substrate 758, whereby the light-emitting deviceillustrated in FIG. 8B can be completed.

As the sealing substrate 758, a glass substrate, a quartz substrate, orthe like can be used. Alternatively, a flexible substrate may be used.The flexible substrate is a substrate that can be bent. For example,besides a plastic substrate made of polycarbonate, polyarylate,polyether sulfone, or the like, a high-molecular material elastomer thatexhibits characteristics of an elastic body like rubber at roomtemperature and can be plasticized to be processed like a plastic athigh temperature can be used. Further alternatively, a film (a film madeof polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride,or the like) or an inorganic evaporated film can be used.

For the partition walls 780 and 782, silicon oxide, silicon nitride,silicon oxynitride, aluminum oxide, aluminum nitride, aluminumoxynitride, or other inorganic insulating materials; acrylic acid,methacrylic acid, or a derivative thereof; a heat-resistant polymer suchas polyimide, aromatic polyamide, or polybenzimidazole; or a siloxaneresin may be used. Alternatively, it is also possible to use a resinmaterial such as a vinyl resin such as polyvinyl alcohol orpolyvinylbutyral, an epoxy resin, a phenol resin, a novolac resin, anacrylic resin, a melamine resin, or a urethane resin. As a manufacturingmethod of the partition walls 780 and 782, a vapor deposition methodsuch as plasma CVD or thermal CVD, or sputtering may be used. Inaddition, droplet discharging or printing can be employed. Furthermore,a film obtained by a coating method, or the like may be used as thepartition walls 780 and 782.

FIG. 13 is a top view of the passive matrix light-emitting deviceillustrated in FIGS. 5A and 5B, on which an FPC and the like aremounted.

In FIG. 13, scan lines and data lines perpendicularly intersect witheach other in a pixel portion for displaying images.

The first electrode layers 751 a, 751 b, and 751 c in FIGS. 5A and 5Bcorrespond to data lines 1102 in FIG. 13, the second electrode layers753 a, 753 b, and 753 c in FIGS. 5A and 5B correspond to scan lines 1103in FIG. 13, and the EL layers 752 a, 752 b, and 752 c correspond to ELlayers 1104 in FIG. 13. The EL layers 1104 are sandwiched between thedata lines 1102 and the scan lines 1103, and an intersection indicatedby a region 1105 corresponds to one pixel (indicated by thelight-emitting element 750 in FIGS. 5A and 5B).

Note that ends of the scan lines 1103 are electrically connected to aconnection wiring 1108, and the connection wiring 1108 is connected toan FPC 1109 b through an input terminal 1107. The data lines 1102 areconnected to an FPC 1109 a through an input terminal 1106.

In addition, a polarizing plate, a circularly polarizing plate(including an elliptically polarizing plate), a retardation plate (aquarter-wave plate or a half-wave plate), or an optical film such as acolor filter may be provided as appropriate over a light-emittingsurface. Furthermore, the polarizing plate or the circularly polarizingplate may be provided with an anti-reflection film. For example,anti-glare treatment may be carried out by which reflected light can bediffused by surface roughness so as to reduce glare.

Although FIG. 13 illustrates an example in which a driver circuit is notprovided over the substrate, the present invention is not particularlylimited to this example. An IC chip including a driver circuit may bemounted on the substrate.

In the case where an IC chip is mounted, a data line side IC and a scanline side IC, each of which includes a driver circuit for transmittingeach signal to the pixel portion, are mounted on the periphery of(outside of) the pixel portion by COG (chip on glass). The mounting maybe performed by TCP or wire bonding other than COG. A TCP is a TAB (tapeautomated bonding) tape on which an IC is mounted, and the IC is mountedby connecting the TAB tape to a wiring over an element substrate. Eachof the data line side IC and the scan line side IC may be formed using asingle crystal silicon substrate. Alternatively, a driver circuit may beformed using TFTs over a glass substrate, a quartz substrate, or aplastic substrate. An example in which a single IC is provided on oneside is described here; however, a plurality of ICs may be provided onone side.

By applying the present invention, a thin film can be formed in a finepattern on a deposition-target substrate without providing a maskbetween a material and the deposition-target substrate. By forming thelight-emitting element by such a deposition method as described in thisembodiment mode, a high-definition light-emitting device can bemanufactured.

This embodiment mode can be combined with any of Embodiment Modes 1 to 4as appropriate.

Embodiment Mode 6

In this embodiment mode, an active matrix light-emitting devicemanufactured by the present invention will be described with referenceto FIGS. 14A and 14B.

FIG. 14A is a top view of a light-emitting device and FIG. 14B is across-sectional view taken along lines A-B and C-D of FIG. 14A.Reference numeral 601 denoted by a dashed line indicates a drivercircuit portion (a source driver circuit); 602, a pixel portion; and603, a driver circuit portion (a gate driver circuit). Further,reference numeral 604 indicates a sealing substrate and referencenumeral 605 indicates a sealing material. A space 607 is provided insidea portion surrounded by the sealing material 605.

A lead wiring 608 is a wiring for transmitting signals to be inputted tothe source driver circuit 601 and the gate driver circuit 603, andreceives video signals, clock signals, start signals, reset signals, andthe like from an FPC (flexible printed circuit) 609 that serves as anexternal input terminal. Although only the FPC is illustrated here, thisFPC may be provided with a printed wiring board (PWB). Thelight-emitting device in this specification refers not only to alight-emitting device itself but also to a light-emitting device towhich an FPC or a PWB is attached.

Next, the cross-sectional structure of the light-emitting device isdescribed with reference to FIG. 14B. The driver circuit portions andthe pixel portion are provided over an element substrate 610; however,FIG. 14B illustrates only the source driver circuit 601 included in thedriver circuit portions and one pixel in the pixel portion 602.

Note that as the source driver circuit 601, a CMOS circuit combining anN-channel transistor 623 and a P-channel transistor 624 is formed.Alternatively, the driver circuit may include various CMOS circuits,PMOS circuits, or NMOS circuits. Although this embodiment mode shows adriver-integrated type in which the driver circuits are formed over thesubstrate, the driver circuits are not necessarily formed over thesubstrate, but may be formed outside the substrate.

The pixel portion 602 has a plurality of pixels each provided with aswitching transistor 611, a current-controlling transistor 612, and afirst electrode 613 electrically connected to a drain of thecurrent-controlling transistor 612. Note that an insulating layer 614 isformed to cover the edge of the first electrode 613. Here, theinsulating layer 614 is formed of a positive photosensitive acrylicresin film. The first electrode 613 is formed over an insulating layer619 that is an interlayer insulating layer.

In order to improve the coverage, the insulating layer 614 is formed soas to have a curved surface with a curvature at either an upper endportion or a lower end portion. For example, in the case of using apositive photosensitive acrylic film for the insulating layer 614, it ispreferable that the insulating layer 614 have a curved surface with acurvature radius (0.2 μm to 3 μm) only at the upper end portion.Alternatively, the insulating layer 614 may be formed of either negativephotosensitive acrylic that becomes insoluble in an etchant after lightirradiation, or positive photosensitive acrylic that becomes dissolublein an etchant after light irradiation.

There is no particular limitation on the structure of the transistor.The transistor may have a single-gate structure including one channelformation region, a double-gate structure including two channelformation regions, or a triple-gate structure including three channelformation regions. Furthermore, a transistor on the periphery of thedriver circuit region may also have a single-gate structure, adouble-gate structure, or a triple-gate structure.

The transistor may have a top-gate structure (e.g., a staggeredstructure or a coplanar structure), a bottom-gate structure (e.g., aninverted-coplanar structure), a dual-gate structure including two gateelectrode layers provided over and under a channel region each with agate insulating film interposed therebetween, or other structures.

In addition, there is no particular limitation on the crystallinity of asemiconductor used for the transistor. The semiconductor layer can beformed of the following materials: an amorphous semiconductor formed bysputtering or a vapor-phase growth method using a semiconductor materialgas typified by silane or germane; a polycrystalline semiconductorformed by crystallizing the amorphous semiconductor by utilizing lightenergy or thermal energy; a single crystal semiconductor; and the like.

The amorphous semiconductor is typified by hydrogenated amorphoussilicon, and the crystalline semiconductor is typified by polysilicon orthe like. Polysilicon (polycrystalline silicon) includes so-calledhigh-temperature polysilicon that contains as its main componentpolysilicon formed at a process temperature of 800° C. or higher,so-called low-temperature polysilicon that contains as its maincomponent polysilicon formed at a process temperature of 600° C. orlower, and polysilicon formed by crystallizing amorphous silicon byusing, for example, an element that promotes crystallization. Instead ofsuch a thin film process, an SOI substrate in which a single crystalsemiconductor layer is provided on an insulating surface may be used.The SOI substrate can be formed by a separation by implanted oxygen(SIMOX) method or a Smart-Cut (registered trademark) method. In theSIMOX method, after oxygen ions are implanted into a single crystalsilicon substrate to form an oxygen-containing layer at a predetermineddepth, heat treatment is performed, an embedded insulating layer isformed at a predetermined depth from the surface of the single crystalsilicon substrate, and a single crystal silicon layer is formed over theembedded insulating layer. In the Smart-Cut (registered trademark)method, hydrogen ions are implanted into an oxidized single crystalsilicon substrate to form a hydrogen-containing layer at a predetermineddepth, the oxidized single crystal silicon substrate is attached toanother supporting substrate (e.g., a single crystal silicon substratehaving a surface provided with a silicon oxide film for bonding), andheat treatment is performed, whereby the single crystal siliconsubstrate is separated at the hydrogen-containing layer to form a stackof the silicon oxide film and the single crystal silicon layer on thesupporting substrate.

An EL layer 616 and a second electrode 617 are formed over the firstelectrode 613. The EL layer 616 of the light-emitting element shown inthis embodiment mode can be formed by the deposition method shown inEmbodiment Mode 1.

The sealing substrate 604 and the element substrate 610 are attached toeach other with the sealing material 605, whereby a light-emittingelement 618 is provided in the space 607 surrounded by the elementsubstrate 610, the sealing substrate 604, and the sealing material 605.Note that the space 607 is filled with an inert gas (nitrogen, argon, orthe like) or a filler such as the sealing material 605.

As the sealing material 605, a visible-light curing resin, anultraviolet curing resin, or a thermosetting resin is preferably used.Specifically, an epoxy resin can be used. In addition, it is preferableto use a material that prevents penetration of moisture or oxygen asmuch as possible. As the sealing substrate 604, a plastic substrate madeof FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride),polyester, acrylic, or the like can be used as well as a glass substrateor a quartz substrate. Alternatively, a film (made of polypropylene,polyester, vinyl, polyvinyl fluoride, vinyl chloride, or the like), oran inorganic evaporated film may be used.

An insulating layer may be provided as a passivation film (a protectivefilm) over the light-emitting element. As the passivation film, it ispossible to use a single layer or stacked layers of an insulating filmcontaining silicon nitride, silicon oxide, silicon oxynitride, siliconnitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitrideoxide containing more nitrogen than oxygen, aluminum oxide, diamond-likecarbon (DLC), or nitrogen-containing carbon. Alternatively, a siloxaneresin may be used.

Instead of the filler, nitrogen or the like may be encapsulated bysealing in a nitrogen atmosphere. In the case where light is extractedfrom the light-emitting device through the filler, the filler needs totransmit light. As the filler, a visible-light curing epoxy resin, anultraviolet curing epoxy resin, or a thermosetting epoxy resin may beused. The filler may be dripped in a liquid state to fill the space inthe light-emitting device. When a hygroscopic substance such as adesiccant is used as the filler, or a hygroscopic substance is added tothe filler, higher absorbing effect can be achieved and deterioration ofelements can be prevented.

In addition, a retardation plate or a polarizing plate may be used toblock the reflection of external incident light. An insulating layerserving as a partition wall may be colored to be used as a black matrix.This partition wall can be formed by droplet discharging with the use ofcarbon black or the like mixed into a resin material such as polyimide,and a stack thereof may also be used. By droplet discharging, differentmaterials may be discharged to the same region plural times to form apartition wall. As the retardation plate, a quarter-wave plate and ahalf-wave plate may be used to control light. As the structure, theelement substrate, the light-emitting element, the sealing substrate(the sealing material), the retardation plates (a quarter-wave plate anda half-wave plate), and the polarizing plate are provided in this order,and light emitted from the light-emitting element passes therethroughand is emitted to the outside from the polarizing plate side. Theretardation plates and the polarizing plate may be provided on a sidefrom which light is emitted, and may be provided on both sides in thecase of a dual-emission light-emitting device in which light is emittedfrom the both sides. In addition, an anti-reflection film may beprovided outside the polarizing plate. Accordingly, higher-resolutionand more precise images can be displayed.

Although the aforementioned circuit is used in this embodiment mode, thepresent invention is not limited thereto and an IC chip may be mountedas a peripheral driver circuit by the aforementioned COG or TAB.Furthermore, the number of gate driver circuits and source drivercircuits is not especially limited.

In the light-emitting device of the present invention, a driving methodfor displaying images is not particularly limited, and for example, adot-sequential driving method, a line-sequential driving method, anarea-sequential driving method, or the like may be used. Typically, theline-sequential driving method is used, and a time-division gray scaledriving method or an area gray scale driving method may be used asappropriate. Furthermore, an image signal inputted to the source line ofthe light-emitting device may be either an analog signal or a digitalsignal. The driver circuit and the like may be designed as appropriatedepending on the image signal.

The light-emitting layer may have a structure in which light-emittinglayers having different wavelength ranges are formed in respectivepixels so that color display is performed. Typically, light-emittinglayers corresponding to R (red), G (green), and B (blue) are formed.Also in that case, a filter transmitting light of a wavelength range maybe provided on the side of a pixel from which light is emitted, wherebycolor purity can be improved and a pixel region can be prevented fromhaving a mirror surface (reflecting). By providing the filter, the lossof light emitted from the light-emitting layer can be eliminated.Furthermore, it is possible to reduce a change in color tone, whichoccurs when the pixel region (a display screen) is seen from an obliqueangle.

By applying the present invention, a thin film can be formed in a finepattern on a deposition-target substrate without providing a maskbetween a material and the deposition-target substrate. By forming thelight-emitting element by such a deposition method as described in thisembodiment mode, a high-definition light-emitting device can bemanufactured.

This embodiment mode can be combined with any of Embodiment Modes 1 to 4as appropriate.

Embodiment Mode 7

By applying the present invention, light-emitting devices having avariety of display functions can be manufactured. That is, the presentinvention can be applied to various electronic devices in which thelight-emitting device having a display function is incorporated in adisplay portion.

Examples of such electronic devices using the present invention are asfollows: a television device (also simply referred to as a television ora television receiver), a camera such as a digital camera or a digitalvideo camera, a cellular telephone device (also simply referred to as acellular phone or a cell-phone), a portable information terminal such asa PDA, a portable game machine, a computer monitor, a computer, a soundreproducing device such as a car audio system, an image reproducingdevice including a recording medium, such as a home-use game machine,and the like. Furthermore, the present invention can be applied to anygame machine having a light-emitting device, such as a pachinko machine,a slot machine, a pinball machine, a large-scale game machine, and thelike. Specific examples will be described with reference to FIGS. 15A to15F, FIGS. 16A and 16B, and FIGS. 17A to 17C.

The application range of the light-emitting device of the presentinvention is so wide that the light-emitting device can be applied toelectronic devices of various fields. By using the deposition method ofthe present invention shown in Embodiment Mode 1, productivity can beimproved and a high-definition pattern can be formed; thus, electronicdevices with high-image quality, which has a large display portion orlighting portion, can be provided at low cost.

A portable information terminal device illustrated in FIG. 15A includesa main body 9201, a display portion 9202, and the like. Thelight-emitting device of the present invention can be applied to thedisplay portion 9202. As a result, a portable information terminaldevice with high-image quality can be provided at low cost.

A digital video camera illustrated in FIG. 15B includes a displayportion 9701, a display portion 9702, and the like. The light-emittingdevice of the present invention can be applied to the display portion9701. As a result, a digital video camera with high-image quality can beprovided at low cost.

A cellular phone illustrated in FIG. 15C includes a main body 9101, adisplay portion 9102, and the like. The light-emitting device of thepresent invention can be applied to the display portion 9102. As aresult, a cellular phone with high-image quality can be provided at lowcost.

FIGS. 17A to 17C illustrate an example of a cellular phone using thepresent invention, which has a structure different from that of FIG.15C. FIG. 17A is a front view, FIG. 17B is a back view, and FIG. 17C isa development view. The cellular phone illustrated in FIGS. 17A to 17Cis a so-called smartphone that has both functions of a cellular phoneand a portable information terminal, incorporates a computer, andconducts a variety of data processing in addition to voice calls.

The cellular phone illustrated in FIGS. 17A to 17C has two housings 8001and 8002. The housing 8001 includes a display portion 8101, a speaker8102, a microphone 8103, operation keys 8104, a pointing device 8105, acamera lens 8106, an external connection terminal 8107, an earphoneterminal 8108, and the like, while the housing 8002 includes a keyboard8201, an external memory slot 8202, a camera lens 8203, a light 8204,and the like. In addition, an antenna is incorporated in the housing8001.

In addition to the above structure, the cellular phone may incorporate anon-contact IC chip, a small-size memory device, or the like.

The light-emitting device shown in the aforementioned embodiment modescan be incorporated in the display portion 8101, and the displayorientation can be changed as appropriate depending on usage. Since thecellular phone is provided with the camera lens 8106 on the same surfaceas the display portion 8101, it can be used as a videophone.Furthermore, still images and moving images can be taken with the cameralens 8203 and the light 8204 by using the display portion 8101 as aviewfinder. The speaker 8102 and the microphone 8103 can be used notonly for verbal communication, but also for videophone, recording,playback, and the like. The operation keys 8104 allow incoming andoutgoing calls, input of simple information such as e-mails, scrollingof a screen, cursor motion, and the like. Furthermore, the housing 8001and the housing 8002 that overlap each other (FIG. 17A) slide relativeto each other to be developed as illustrated in FIG. 17C, and can beused as a portable information terminal. In that case, operation can besmoothly performed using the keyboard 8201 and the pointing device 8105.The external connection terminal 8107 can be connected to an AC adapterand a variety of cables such as a USB cable, and can be used for thecharge of a built-in battery and for data communication with a computeror the like. Furthermore, a larger amount of data can be stored andtransferred using a storage medium inserted into the external memoryslot 8202.

In addition to the aforementioned functions, the cellular phone may alsohave an infrared communication function, a television receptionfunction, or the like.

The light-emitting device of the present invention can be applied to thedisplay portion 8101. As a result, a cellular phone with high-imagequality can be provided at low cost.

A portable computer illustrated in FIG. 15D includes a main body 9401, adisplay portion 9402, and the like. The light-emitting device of thepresent invention can be applied to the display portion 9402. As aresult, a portable computer with high-image quality can be provided atlow cost.

The light-emitting device of the present invention can also be appliedto a small-size desk lamp or a large-size indoor lighting device. A desklamp illustrated in FIG. 15E includes a lighting portion 9501, a shade9502, an adjustable arm 9503, a support 9504, a base 9505, and a powersource 9506. The light-emitting device of the present invention can beapplied to the lighting portion 9501. Note that the lighting deviceincludes a ceiling light, a wall light, and the like. By applying thepresent invention, a large-size lighting device can be provided at lowcost.

Furthermore, the light-emitting device of the present invention can beused as a backlight of a liquid crystal display device. Since thelight-emitting device of the present invention is a lighting device withplanar light emission and can be increased in area, the area of thebacklight can be increased, resulting in the liquid crystal displaydevice with a larger area. In addition, the light-emitting device of thepresent invention has a small thickness; thus, the thickness of theliquid crystal display device can also be reduced.

A portable television device illustrated in FIG. 15F includes a mainbody 9301, a display portion 9302, and the like. The light-emittingdevice of the present invention can be applied to the display portion9302. As a result, a portable television device with high-image qualitycan be provided at low cost. Furthermore, the light-emitting device ofthe present invention can be applied to a wide range of televisiondevices: small devices installed in portable terminals such as cellularphones; mid-sized devices that can be picked up and carried; andlarge-sized devices (for example, 40-inch displays and above).

FIG. 16A illustrates a television device having a large-size displayportion. The light-emitting device of the present invention can beapplied to a main screen 2003. The television device also includes aspeaker portion 2009, operation switches, and the like. In such amanner, a television device can be completed.

As illustrated in FIG. 16A, a display panel 2002 using a light-emittingelement is incorporated in a housing 2001. The television device canreceive general TV broadcast with a receiver 2005. When the televisiondevice is connected to a communication network by wired or wirelessconnections via a modem 2004, one-way (from a sender to a receiver) ortwo-way (between a sender and a receiver or between receivers)information communication can also be performed. The television devicecan be operated by a switch built in the housing, or a remote controlunit 2006 that is provided separately. The remote control unit 2006 mayalso have a display portion 2007 for displaying information to beoutputted.

The television device may also include a sub screen 2008 formed using asecond display panel in addition to the main screen 2003, so thatchannels, sound volume, and the like are displayed.

FIG. 16B illustrates a television device having a large-size displayportion, for example, a 20-inch to 80-inch display portion. Thetelevision device includes a housing 2010, a display portion 2011, aremote control unit 2012 that is an operation portion, a speaker portion2013, and the like. The present invention is applied to the displayportion 2011. By applying the present invention, a large-size televisiondevice with high-image quality can be provided at low cost. Thetelevision device illustrated in FIG. 16B is a wall-hanging type, anddoes not require a large installation space.

Needles to say, the present invention can be applied to variousapplications, particularly to large-size display media such as aninformation board at train stations, airports, or the like, or anadvertising display screen on the street.

This embodiment mode can be combined with any of Embodiment Modes 1 to 6as appropriate.

Embodiment 1

In this embodiment, the heat distribution on a deposition substrate usedin the deposition method of the present invention, at the time of lightirradiation, is calculated. Models used for the calculation areillustrated in FIG. 21 and FIGS. 22A and 22B. Note that the calculationis performed using a two-dimensional model. In the present invention, adeposition substrate and a deposition-target substrate are preferablyplaced close to each other in order to selectively form a thin film in amore precise pattern. Furthermore, it is preferable to reduce thethickness of a heat-insulating layer so that a deposition substrate iseasily manufactured. In this embodiment, calculation is performed usingthe following models in order to confirm that the effect of the presentinvention can be obtained even if the thickness of a heat-insulatinglayer is not large enough to completely block heat conduction.

The model illustrated in FIG. 21 is a deposition substrate of thisembodiment. A two-dimensional model is employed in which a reflectivelayer 302 (a 200 nm thick aluminum film), a first heat-insulating layer303 a (a 1000 nm thick silicon oxide film), a second heat-insulatinglayer 303 b (a 1000 nm thick silicon oxide film), and a light absorptionlayer 304 (a 200 nm thick titanium film) are formed over a glasssubstrate 301 (0.7 mm thick). Note that the width of the first regioncorresponding to an opening of the reflective layer 302 is 23.5 μm. Thetemperature of the center of a film is measured at each of positions A1,A2, and A3. In FIG. 21, A1 is the center of the first region, a position9.2 μm away from A1 in a film-plane direction is A2, and a position 22.2μm away from A1 in a film-plane direction is A3.

The models illustrated in FIGS. 22A and 22B are deposition substratesused for comparison. FIG. 22A is a deposition substrate of comparativeexample 1, and FIG. 22B is a deposition substrate of comparative example2. As illustrated in FIG. 22A, a two-dimensional model is employed inwhich a reflective layer 312 (a 200 nm thick aluminum film) and a lightabsorption layer 314 (a 200 nm thick titanium film) are formed over aglass substrate 311 (0.7 mm thick). Note that the width of the firstregion corresponding to an opening of the reflective layer 312 is 23.5μm. The temperature of the center of a film is measured at each ofpositions C1, C2, and C3. In FIG. 22A, C1 is the center of the firstregion, a position 9.2 μm away from C1 in a film-plane direction is C2,and a position 22.2 μm away from C1 in a film-plane direction is C3.

FIG. 22B has a structure in which a continuous heat-insulating layer 323is provided between the reflective layer 312 and the light absorptionlayer 314 of FIG. 22A. A two-dimensional model is employed in which areflective layer 322 (a 200 nm thick aluminum film), the heat-insulatinglayer 323 (1000 nm thick silicon oxide film), a light absorption layer324 (a 200 nm thick titanium film) are formed over a glass substrate 321(0.7 mm thick). Note that the width of the first region corresponding toan opening of the reflective layer 322 is 23.5 μm. The temperature ofthe center of a film is measured at each of positions D1, D2, and D3. InFIG. 22B, D1 is the center of the first region, a position 9.2 μm awayfrom D1 in a film-plane direction is D2, and a position 22.2 μm awayfrom D1 in a film-plane direction is D3.

Calculation conditions are as follows: calculation tool is ANSYS; a freemesh of three-node triangle is used; and the minimum mesh length is 0.05μm. Since the heat conduction characteristics depend on temperature, anonlinear analysis (Newton method) is employed. The time interval of thenonstationary analysis is 0.125 μs, the initial temperature is uniformly27° C., and the boundary conditions are all heat-insulating boundaryconditions.

Calculation results are shown in FIGS. 23 to 25. FIGS. 23 to 25 aregraphs showing the relationship of the maximum temperature at eachmeasurement position. Each model is irradiated with light for 1.2×10⁻²sec., 1.2×10⁻³ sec., and 1.2×10⁻⁴ In FIG. 23, the measurement values atan irradiation time of 1.2×10⁻² sec. are indicated by whitediamond-shaped dots, the measurement values at an irradiation time of1.2×10⁻³ sec. are indicated by white square dots, and the measurementvalues at an irradiation time of 1.2×10⁻⁴ sec. are indicated by whitetriangular dots. In FIGS. 24 and 25, the measurement values at anirradiation time of 1.2×10⁻² sec. are indicated by black diamond-shapeddots, the measurement values at an irradiation time of 1.2×10⁻³ sec. areindicated by black square dots, and the measurement values at anirradiation time of 1.2×10⁻⁴ sec. are indicated by black triangulardots.

Table 1 shows the temperature difference between the first region inwhich a material in the first organic compound-containing layer isdeposited on the deposition-target substrate and the second region inwhich light is reflected by the reflective layer and a material in thesecond organic compound-containing layer is not deposited on thedeposition-target substrate. The temperature difference is measuredbetween A2, C2, and D2 that are the end of the light absorption layer inthe first region, and A3, C3, and D3 that are the end of the lightabsorption layer over the reflective layer in the second region.

TABLE 1 embodiment comparative comparative temperature example 1 example2 difference temperature temperature irradiation between differencebetween difference time A2 and A3 C2 and C3 between D2 and D3 (sec) (°C.) (° C.) (° C.) 1.2 × 10⁻² 15 6 8 1.2 × 10⁻³ 46 19 21 1.2 × 10⁻⁴ 10143 48

As shown in FIGS. 23 to 25, the maximum temperature is measured at A1,C1, and D1 in each model, which is the center of the first region inwhich light is absorbed by the light absorption layer. The maximumtemperature decreases toward the second region in which light isreflected by the reflective layer (from A2, C2, and D2 to A3, C3, andD3). In each model, the temperature difference between A2 and A3,between C2 and C3, and between D2 and D3, each of which is on theboundary between the first region and the second region, decreases asthe irradiation time increases. This is because, as the irradiation timeincreases, heat is conducted from the first region to the second regionand the temperature of the second region increases. Thus, in the casewhere a light source with high energy is used or light is emitted for along time, in order to further decrease the temperature of the secondregion, it is preferable to increase the thickness of the firstheat-insulating layer and the second heat-insulating layer and increasethe heat conduction path from the light absorption layer over the firstheat-insulating layer to the organic compound-containing layer over thesecond heat-insulating layer. The heat is absorbed or diffused to bedissipated while passing through the first heat-insulating layer, thelight-transmitting substrate, and the second heat-insulating layer thatare the heat conduction path. It is preferable that the heat conductionpath include elements made of different materials, such as the firstheat-insulating layer, the light-transmitting substrate, and the secondheat-insulating layer, because more heat can be dissipated when passingtherethrough. By increasing the heat conduction path from the lightabsorption layer over the first heat-insulating layer to the organiccompound-containing layer over the second heat-insulating layer, thetime for the heat to reach the second region increases and more heat isdissipated. Therefore, the temperature of the organiccompound-containing layer in the second region can be lowered.

As shown in Table 1, the temperature difference between the first regionand the second region of this embodiment (A2 and A3) is more than twicethat between the first region and the second region of the comparativeexamples 1 and 2 (C2 and C3, and D2 and D3).

When there is a space (a distance) between the first heat-insulatinglayer in the first region and the second heat-insulating layer in thesecond region as in this embodiment, the heat conduction path from thelight absorption layer in the first region to the organiccompound-containing layer in the second region can be increased.Accordingly, the time for the heat generated in the light absorptionlayer in the first region to reach the second region increases.Furthermore, the heat is absorbed or diffused to be dissipated whilepassing through the first heat-insulating layer, the light-transmittingsubstrate, and the second heat-insulating layer. Thus, in thisembodiment, it is confirmed that the temperature of the second regioncould be lowered and the temperature difference between the first regionand the second region could be increased.

Accordingly, a large part of the organic compound-containing layer inthe second region can be left in the deposition substrate; therefore,the film reflecting the pattern of the first region can be selectivelydeposited in a fine pattern on the deposition-target substrate. Inaddition, even when lamp light, which requires a longer irradiation timethan laser light, is used, the organic compound-containing layer in thesecond region can be prevented from being heated and the temperaturedifference between the first region and the second region can be kept;thus, a lamp can be used as a light source. A larger area can be treatedat a time with lamp light as compared with laser light, resulting inreduction in manufacturing time and improvement in throughput.

Thus, as compared with in the models of the comparative examples, in themodel of this embodiment, the material in the organiccompound-containing layer in the second region can be prevented frombeing attached to the deposition-target substrate, and a depositionpattern can be prevented from being deformed due to heat conducted fromthe first region. Accordingly, by applying the deposition substrate usedfor the deposition method of the present invention, a higher-definitionlight-emitting device can be manufactured at low cost.

This application is based on Japanese Patent Application serial No.2008-104906 filed with Japan Patent Office on Apr. 14, 2008, the entirecontents of which are hereby incorporated by reference.

1. A method for manufacturing a light-emitting device, comprising:disposing a first substrate and a second substrate having a firstelectrode so that the first substrate faces the first electrode, thefirst substrate including a first region and a second region and beingcapable of transmitting light; the first region including: a firstheat-insulating layer provided over the first substrate, the firstheat-insulating layer being capable of transmitting the light; a lightabsorption layer provided over the first heat-insulating layer, thelight absorption layer being capable of absorbing the light, and a firstorganic compound-containing layer provided over the light absorptionlayer; the second region including: a reflective layer provided over thefirst substrate, the reflective layer being capable of reflecting thelight; a second heat-insulating layer provided over the reflectivelayer, and a second organic compound-containing layer provided over thesecond heat-insulating layer, wherein an edge of the secondheat-insulating layer is placed inside an edge of the reflective layer,and wherein a space is provided between the first heat-insulating layerand the second heat-insulating layer, irradiating the light absorptionlayer with the light through the first substrate and the firstheat-insulating layer to evaporate the first organic compound-containinglayer, thereby forming a light-emitting layer on the first electrode;and forming a second electrode layer on the light-emitting layer.
 2. Themethod for manufacturing a light-emitting device according to claim 1,wherein heat is conducted from the light absorption layer to the firstorganic compound-containing layer.
 3. The method for manufacturing alight-emitting device according to claim 1, wherein, after irradiationwith the light, the second organic compound-containing layer remainsover the second heat-insulating layer.
 4. The method for manufacturing alight-emitting device according to claim 1, wherein the firstheat-insulating layer prevents heat from being conducted from the lightabsorption layer to the second region, and wherein the secondheat-insulating layer prevents heat from being conducted from thereflective layer to the second organic compound-containing layer.
 5. Themethod for manufacturing a light-emitting device, according to claim 1,wherein the light absorption layer is irradiated with the light underreduced pressure.
 6. The method for manufacturing a light-emittingdevice, according to claim 1, wherein lamp light or laser light is usedas the light.